component
VB1240B
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
VB1240B
VBsemi Elec · MOSFETs · SOT-23(TO-236)
VB1240B from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with VGS(th) of 0.5 V to 1.5 V at ID = 250 μA. |
| 2 | S | passive | Source; continuous source-drain diode current is 2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage is 20 V maximum, with RDS(on) of 0.020 Ω at VGS = 4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | TA = 25 °C | 1 | ||
| Gate-source voltage | VGS | -12 | 12 | V | TA = 25 °C | 1 | |
| Pulsed drain current | IDM | 26 | A | t = 300 μs | 1 | ||
| Continuous drain current | ID | 5 | A | TA = 25 °C, TJ = 150 °C | 1 | ||
| Continuous source-drain diode current | IS | 2.1 | A | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 2.8 | W | TC = 25 °C | 1 | ||
| Operating junction and storage temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering peak temperature | 260 | °C | 1 | ||||
| Junction-to-ambient thermal resistance | RthJA | 75 | 100 | °C/W | t ≤ 5 s | 1 | |
| Junction-to-foot thermal resistance | RthJF | 40 | 50 | °C/W | Steady state | 1 | |
| Drain-source breakdown voltage | VDS | 20 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 0.5 | 1.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 20V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | μA | VDS = 20V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-state drain current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Gate resistance | Rg | 2.5 | 12.6 | 25.2 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 6 | 12 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 20 | 30 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 14 | 21 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 10 | 20 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 11 | 20 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 20 | 30 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 7 | 14 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulse diode forward current | ISM | 25 | A | 2 | |||
| Body diode voltage | VSD | 0.82 | 1.2 | V | IS = 4.4 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 13 | 20 | ns | IF = 4.4 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body diode reverse recovery charge | Qrr | 6 | 12 | nC | IF = 4.4 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.02 | Ω | VGS = 4.5V, ID = 5.5 A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.025 | Ω | VGS = 2.5 V, ID = 5 A | 2 | ||
| Forward transconductance | gfs | 24 | S | VDS = 15 V, ID = 5.5 A | 2 | ||
| VDS temperature coefficient | ΔVDS/TJ | 30 | mV/°C | ID = 250 μA | 2 | ||
| VGS(th) temperature coefficient | ΔVGS(th)/TJ | -4.8 | mV/°C | ID = 250 μA | 2 | ||
| Reverse transfer capacitance | Crss | 42 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
VB1240B - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
vb1240b-etched.step/vb1240b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vb1240b.step/vb1240b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
954b6b7e794ef7ca, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# VB1240B
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
VB1240B from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with VGS(th) of 0.5 V to 1.5 V at ID = 250 μA. |
| 2 | S | passive | Source; continuous source-drain diode current is 2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage is 20 V maximum, with RDS(on) of 0.020 Ω at VGS = 4.5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 20 | V | TA = 25 °C | 1 |
| Gate-source voltage | VGS | -12 | | 12 | V | TA = 25 °C | 1 |
| Pulsed drain current | IDM | | | 26 | A | t = 300 μs | 1 |
| Continuous drain current | ID | | | 5 | A | TA = 25 °C, TJ = 150 °C | 1 |
| Continuous source-drain diode current | IS | | | 2.1 | A | TC = 25 °C | 1 |
| Maximum power dissipation | PD | | | 2.8 | W | TC = 25 °C | 1 |
| Operating junction and storage temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering peak temperature | | | | 260 | °C | | 1 |
| Junction-to-ambient thermal resistance | RthJA | | 75 | 100 | °C/W | t ≤ 5 s | 1 |
| Junction-to-foot thermal resistance | RthJF | | 40 | 50 | °C/W | Steady state | 1 |
| Drain-source breakdown voltage | VDS | 20 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 0.5 | | 1.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 20V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS | | | 10 | μA | VDS = 20V, VGS = 0 V, TJ = 70 °C | 2 |
| On-state drain current | ID(on) | 20 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Gate resistance | Rg | 2.5 | 12.6 | 25.2 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | | 6 | 12 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise time | tr | | 20 | 30 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-off delay time | td(off) | | 14 | 21 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall time | tf | | 10 | 20 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise time | tr | | 11 | 20 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-off delay time | td(off) | | 20 | 30 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall time | tf | | 7 | 14 | ns | VDD = 10 V, RL = 3.4 Ω, ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Pulse diode forward current | ISM | | | 25 | A | | 2 |
| Body diode voltage | VSD | | 0.82 | 1.2 | V | IS = 4.4 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr | | 13 | 20 | ns | IF = 4.4 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |
| Body diode reverse recovery charge | Qrr | | 6 | 12 | nC | IF = 4.4 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.02 | | Ω | VGS = 4.5V, ID = 5.5 A | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.025 | | Ω | VGS = 2.5 V, ID = 5 A | 2 |
| Forward transconductance | gfs | | 24 | | S | VDS = 15 V, ID = 5.5 A | 2 |
| VDS temperature coefficient | ΔVDS/TJ | | 30 | | mV/°C | ID = 250 μA | 2 |
| VGS(th) temperature coefficient | ΔVGS(th)/TJ | | -4.8 | | mV/°C | ID = 250 μA | 2 |
| Reverse transfer capacitance | Crss | | 42 | | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 |
## CAD (KiCad official)
- Symbol: `VB1240B`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `vb1240b-etched.step` / `vb1240b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vb1240b.step` / `vb1240b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/vb1240b-datasheet.pdf) (9 pp, sha256 `954b6b7e794ef7ca`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/vb1240b-datasheet.pdf)