# VB1218X

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

VB1218X from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage VGS is rated ±12 V absolute maximum. |
| 2 | S | passive | Source of the N-channel MOSFET; the continuous source-drain diode current IS is rated 3 A at TC = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage VDS is rated 20 V and continuous drain current ID is rated 8 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 8 | A | TC = 25 °C (TJ = 150 °C) | 1 |
| Continuous Drain Current | ID |  |  | 5.5 | A | TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 6 | A | TA = 25 °C (notes b, c) | 1 |
| Avalanche Current | IAS |  |  | 14 | A | L = 0.1 mH | 1 |
| Avalanche Energy | EAS |  |  | 11.25 | mJ |  | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 3 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 1.5 | A | TA = 25 °C (notes b, c) | 1 |
| Maximum Power Dissipation | PD |  |  | 3.2 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.8 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.2 | W | TA = 25 °C (notes b, c) | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA = 70 °C (notes b, c) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 260 | °C | Peak temperature (notes d, e) | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 29 | 36 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 81 | °C/W | Steady state (note f) | 1 |
| Maximum Junction-to-Case (Drain) | RthJC |  | 3.6 | 4.5 | °C/W | Steady state | 1 |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 |  | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.015 | Ω | VGS = 4.5 V, ID = 10 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.018 | Ω | VGS = 2.5 V, ID = 7 A | 2 |
| Gate Resistance | Rg | 0.2 | 0.9 | 1.8 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 15 | 23 | nC | VDS = 10 V, VGS = 10 V, ID = 10 A | 2 |
| Turn-On Delay Time | td(on) |  | 15 | 30 | ns | VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 11 | 22 | ns | VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 16 | 30 | ns | VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 8 | 16 | ns | VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 10 | 20 | ns | VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 8 | 16 | ns | VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 7 | 14 | ns | VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD |  | 0.77 | 1.2 | V | IS = 3 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 14 | 28 | ns | IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 4.5 | 9 | nC | IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper |  | d. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A | 1 |

## CAD (KiCad official)

- Symbol: `VB1218X`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `vb1218x-etched.step` / `vb1218x-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vb1218x.step` / `vb1218x.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609157626173812736) (9 pp, sha256 `f7f0f2fda94fc27a`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/vb1218x-datasheet.pdf)