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VB1210

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VB1210

VBsemi Elec · MOSFETs · SOT-23(TO-236)

VB1210 from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V absolute maximum, threshold VGS(th) 0.5 to 2.0 V.
2 S passive Source; continuous source-drain diode current 3 A at TC = 25 °C.
3 D passive Drain; drain-source voltage rated 20 V, continuous drain current 9 A at TC = 25 °C (package limited).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 9 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID 6.5 A TC = 70 °C 1
Continuous Drain Current ID 7 A TA = 25 °C 1
Continuous Drain Current ID 4.5 A TA = 70 °C 1
Pulsed Drain Current IDM 32 A 1
Avalanche Current IAS 15 A L = 0.1 mH 1
Avalanche Energy EAS 11.25 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 3 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.5 A TA = 25 °C 1
Maximum Power Dissipation PD 3.5 W TC = 25 °C 1
Maximum Power Dissipation PD 2 W TC = 70 °C 1
Maximum Power Dissipation PD 2.3 W TA = 25 °C 1
Maximum Power Dissipation PD 1 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Notes d, e 1
Maximum Junction-to-Ambient RthJA 29 36 °C/W t ≤ 10 s, notes b, f 1
Maximum Junction-to-Ambient RthJA 81 °C/W Steady state (note f) 1
Maximum Junction-to-Case (Drain) RthJC 3.6 4.5 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.5 2 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 12 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = 10 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = 4.5 V, ID = 7 A 2
Gate Resistance Rg 0.2 0.9 1.8 Ω f = 1 MHz 2
Total Gate Charge Qg 15 23 nC VDS = 10 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge Qg 7 10 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 2
Turn-On Delay Time td(on) 15 30 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 11 22 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 16 30 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 10 20 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 8 16 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 12 A TC = 25 °C 2
Pulse Diode Forward Current ISM 36 A 2
Body Diode Voltage VSD 0.77 1.2 V IS = 3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 14 28 ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 4.5 9 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ 22 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5 mV/°C 2
Input Capacitance Ciss 850 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 305 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 120 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Forward Transconductance gfs 26 S VDS = 10 V, ID = 10 A 2
Gate-Source Charge Qgs 2.2 nC 2
Gate-Drain Charge Qgd 2.1 nC 2
Reverse Recovery Fall Time ta 5.5 ns 2
Reverse Recovery Rise Time tb 8.5 ns 2

CAD (KiCad official)

  • Symbol: VB1210
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: vb1210-etched.step / vb1210-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vb1210.step / vb1210.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 afb584e4a0ee43c8, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF