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VB1204M

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VB1204M

VBsemi Elec · MOSFETs · SOT-23(TO-236)

VB1204M from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.5 V min to 4.5 V max at ID = 250 µA.
2 S passive Source; continuous source current (diode conduction) is 0.6 A (5 s).
3 D passive Drain; drain-source voltage rated at 200 V, with 0.6 A continuous drain current (5 s) and 2.5 A pulsed.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 0.6 A TJ = 150 °C; TA = 25 °C; 5 s 1
Continuous Drain Current ID 0.5 A TJ = 150 °C; TA = 70 °C; 5 s 1
Continuous Drain Current ID 0.45 A TJ = 150 °C; TA = 25 °C; steady state 1
Continuous Drain Current ID 0.35 A TJ = 150 °C; TA = 70 °C; steady state 1
Pulsed Drain Current IDM 2.5 A 1
Avalanche Current IAS 2.5 A L = 0.1 mH 1
Single Avalanche Energy EAS 50 mJ 1
Continuous Source Current (Diode Conduction) IS 0.6 A 1
Power Dissipation PD 1.55 W TA = 25 °C; 5 s 1
Power Dissipation PD 1.03 W TA = 25 °C; steady state 1
Power Dissipation PD 1.2 W TA = 70 °C; 5 s 1
Power Dissipation PD 0.87 W TA = 70 °C; steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 80 100 °C/W 5 s 1
Maximum Junction-to-Ambient RthJA 130 170 °C/W steady state 1
Maximum Junction-to-Foot RthJF 45 55 °C/W steady state 1
Drain-Source Breakdown Voltage VDS 200 V VGS = 0 V, ID = 1 mA 2
Gate-Threshold Voltage VGS(th) 1.5 4.5 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 75 µA VDS = 100 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 2.5 A VDS 15 V, VGS = 10 V 2
Drain-Source On-Resistance RDS(on) 1.4 Ω VGS = 10 V, ID = 0.5 A 2
Diode Forward Voltage VSD 0.8 1.2 V IS = 1 A, VGS = 0 V 2
Total Gate Charge Qg 3 5 nC VDS = 100 V, VGS = 10 V, ID = 0.5 A 2
Gate Resistance Rg 0.5 1.3 2.4 Ω 2
Turn-On Delay Time td(on) 7 11 ns VDD = 100 V, RL = 33, ID 0.2 A, VGEN = 10 V, Rg = 6 2
Rise Time tr 10 15 ns VDD = 100 V, RL = 33, ID 0.2 A, VGEN = 10 V, Rg = 6 2
Turn-Off Delay Time td(off) 9 15 ns VDD = 100 V, RL = 33, ID 0.2 A, VGEN = 10 V, Rg = 6 2
Fall Time tf 11 15 ns VDD = 100 V, RL = 33, ID 0.2 A, VGEN = 10 V, Rg = 6 2
Source-Drain Reverse Recovery Time trr 50 100 ns IF = 0.5 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: VB1204M
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: vb1204m-etched.step / vb1204m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vb1204m.step / vb1204m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 34b0c4fe198ee1bc, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF