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V30200C-E3

Vishay Intertech · Schottky Diodes · TO-220AB-3

V30200C-E3 from Vishay Intertech, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PIN 1 (anode) passive Diode anode terminal of the first rectifier in the dual common-cathode TO-220AB package; per-diode average forward current is 15 A and repetitive peak reverse voltage is 200 V.
2 K (common cathode) passive Common cathode shared by both diodes, electrically connected to the heatsink tab; mounting torque is 10 in-lbs maximum.
3 PIN 3 (anode) passive Diode anode terminal of the second rectifier in the dual common-cathode TO-220AB package; per-diode average forward current is 15 A and repetitive peak reverse voltage is 200 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown voltage VBR 205 V IR = 10 mA, TA = 25 °C 2
Instantaneous forward voltage per diode VF 0.841 1.1 V IF = 15 A, TA = 25 °C; pulse test (1) 2
Instantaneous forward voltage per diode VF 0.648 0.72 V IF = 15 A, TA = 125 °C; pulse test (1) 2
Reverse current per diode IR 5.3 160 μA VR = 200 V, TA = 25 °C; pulse test (2) 2
Reverse current per diode IR 6 12 mA VR = 200 V, TA = 125 °C; pulse test (2) 2
Maximum repetitive peak reverse voltage VRRM 200 V 1
Maximum average forward rectified current, per device IF(AV) 30 A per device (fig. 1) 1
Maximum average forward rectified current, per diode IF(AV) 15 A per diode (fig. 1) 1
Peak forward surge current IFSM 250 A 8.3 ms single half sine-wave superimposed on rated load, per diode 1
Non-repetitive avalanche energy EAS 200 mJ TJ = 25 °C, L = 60 mH, per diode 1
Peak repetitive reverse current IRRM 0.5 A tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C, per diode 1
Voltage rate of change dV/dt 10000 V/μs rated VR 1
Operating junction and storage temperature range TJ, TSTG -40 150 °C 1
Instantaneous forward voltage per diode VF 0.691 V IF = 5 A, TA = 25 °C; pulse test (1) 2
Instantaneous forward voltage per diode VF 0.77 V IF = 10 A, TA = 25 °C; pulse test (1) 2
Instantaneous forward voltage per diode VF 0.526 V IF = 5 A, TA = 125 °C; pulse test (1) 2
Instantaneous forward voltage per diode VF 0.594 V IF = 10 A, TA = 125 °C; pulse test (1) 2
Reverse current per diode IR 2.4 μA VR = 180 V, TA = 25 °C; pulse test (2) 2
Reverse current per diode IR 3.8 mA VR = 180 V, TA = 125 °C; pulse test (2) 2
Typical thermal resistance per diode, junction to case RJC 2 °C/W per diode 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 1

CAD (KiCad official)

  • Symbol: V30200C-E3
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: v30200c-e3-etched.step / v30200c-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); v30200c-e3.step / v30200c-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (6 pp, sha256 74d52dd43e153a5e, retrieved 2026-10-20, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF