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UTT60N06L-TN3-R-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorutt60n06l-tn3-r-vbfactory-2.0.0extractor-text

Verified UTT60N06L-TN3-R-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: UTT60N06L-TN3-R-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-kph_5h_l/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ utt60n06l-tn3-r-vb.kicad_sym✓ utt60n06l-tn3-r-vb.kicad_mod✓ utt60n06l-tn3-r-vb.step
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Contents

README

markdown

UTT60N06L-TN3-R-VB

VBsemi Elec · MOSFETs · TO-252

UTT60N06L-TN3-R-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate-source voltage is rated ±20 V (VGS), and gate-source leakage IGSS is limited to ±100 nA at VGS = ±20 V.
2 D passive Drain-source voltage is rated 60 V (VDS), and continuous drain current is 97 A at TC = 25 °C.
3 S passive Source is the diode conduction terminal, with continuous source current IS rated at 100 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 97 A TC = 25 °C 1
Continuous Drain Current ID 56 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 100 A 1
Pulsed Drain Current IDM 290 A 1
Single Pulse Avalanche Current IAS 45 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 101 mJ 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Maximum Power Dissipation PD 45 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient PCB Mount RthJA 50 °C/W 1
Junction-to-Case (Drain) RthJC 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) 50 A VGS = 10 V VDS5 V 2
Output Capacitance Coss 441 555 pF VGS = 0 V VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 200 250 pF VGS = 0 V VDS = 25 V, f = 1 MHz 2
Gate Resistance Rg 1 2 3 Ω f = 1 MHz 2
Turn-Off Delay Time td(off) 41 62 ns VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 1 2
Fall Time tf 7 11 ns VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 1 2
Pulsed Current ISM 290 A 2
Forward Voltage VSD 0.9 1.5 V IF = 50 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: UTT60N06L-TN3-R-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: utt60n06l-tn3-r-vb-etched.step / utt60n06l-tn3-r-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); utt60n06l-tn3-r-vb.step / utt60n06l-tn3-r-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 1fa81fee08301292, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF