component
UTT50P06-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUTT50P06-VB
VBsemi Elec · MOSFETs · TO-220AB
UTT50P06-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V (VGS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated −60 V (VDS) with continuous drain current of −50 A per the product summary. |
| 3 | S | passive | Source terminal; continuous source-drain diode current is rated 69 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -50 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -46 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | -39 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | -34 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | -200 | A | 1 | |||
| Avalanche Current | IAS | -45 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 101 | mJ | 1 | |||
| Continuous Source-Drain Diode Current | IS | 69 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 20 | A | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 104.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 66.7 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.1 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 33 | 40 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Case | RthJC | 0.98 | 1.2 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -60 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -120 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 26 | mΩ | VGS = -4.5 V, ID = -20 A | 2 | ||
| Total Gate Charge | Qg | 76 | 115 | nC | VDS = -30 V, VGS = -10 V, ID = -55 A | 2 | |
| Total Gate Charge | Qg | 38 | 60 | nC | VDS = -30 V, VGS = -4.5 V, ID = -55 A | 2 | |
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 7 | 15 | ns | VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 70 | 110 | ns | VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 40 | 60 | ns | VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -69 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -150 | A | 2 | |||
| Body Diode Voltage | VSD | -1 | -1.5 | V | IS = -30 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 45 | 68 | ns | IF = -50 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 59 | 120 | nC | IF = -50 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
UTT50P06-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
utt50p06-vb-etched.step/utt50p06-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);utt50p06-vb.step/utt50p06-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
63cb7566e0c501c7, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).