# UTT50P04G

**UTC Unisonic Tech** · MOSFETs · TO-252

UTT50P04G from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET, with a gate-source voltage rating of ±20 V (VGSS) in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal, with a drain-source voltage rating of -40 V (VDSS) and a continuous drain current of -50 A (Note 2) in the absolute maximum ratings. |
| 3 | S | passive | Source terminal, with a continuous source current (diode conduction) of -50 A (Note 2) in the absolute maximum ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 |  |  | V |  | 3 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 3 |
| Drain Current Continuous | ID | -50 |  |  | A | Note 2 | 3 |
| Pulsed Drain Current | IDM | -100 |  |  | A |  | 3 |
| Continuous Source Current (Diode Conduction) | IS | -50 |  |  | A | Note 2 | 3 |
| Avalanche Current | IAR | -40 |  |  | A |  | 3 |
| Avalanche Energy | EAS |  |  | 80 | mJ |  | 3 |
| Power Dissipation TO-252 | PD |  |  | 56 | W | TO-252 | 3 |
| Junction Temperature | TJ | -55 |  | 150 | °C |  | 3 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 3 |
| Junction to Ambient TO-252 | θJA |  |  | 110 | °C/W | TO-220F/TO-252 | 3 |
| Junction to Case TO-252 | θJC |  |  | 2.5 | °C/W | Note 2 | 3 |
| Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | ID=-250µA, VGS=0V | 4 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | µA | VDS=-40V, VGS=0V | 4 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=+20V, VDS=0V | 4 |
| Gate-Source Leakage Current Reverse | IGSS |  |  | -100 | nA | VGS=-20V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | -1 |  | -3 | V | VDS=VGS, ID=-250µA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) |  |  | 15 | mΩ | VGS=-10V, ID=-30A | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) |  |  | 25 | mΩ | VGS=-4.5V, ID=-20A | 4 |
| Maximum Body-Diode Pulsed Current | ISM | -50 |  |  | A |  | 4 |
| Drain-Source Diode Forward Voltage | VSD |  |  | -1.5 | V | IF=-50A, VGS=0V | 4 |

## CAD (KiCad official)

- Symbol: `UTT50P04G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `utt50p04g-etched.step` / `utt50p04g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `utt50p04g.step` / `utt50p04g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078200150929408) (10 pp, sha256 `cd8a24afef43bd2b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/utt50p04g-datasheet.pdf)