UTT50N06G

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  "title": "UTT50N06G",
  "brief": "UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "UTT50N06G",
    "manufacturer": "UTC Unisonic Tech",
    "package": "TO-252",
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    "subcategory": "MOSFETs",
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      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant (UTT50N06G-TN3-R); the datasheet rates gate-source voltage VGSS at ±20 V on page 3."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant; the datasheet rates continuous drain current ID at 50 A and pulsed IDM at 100 A on page 3."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant; the datasheet gives no separate pin-specific limit for it."
      }
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  "metadata": {
    "specs": {
      "Manufacturer": "UTC Unisonic Tech",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
      "version": 1,
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        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250μA",
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        {
          "name": "Drain-Source Leakage Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
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          "conditions": "VDS=60V, VGS=0V",
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        {
          "name": "Gate-Source Leakage Current Forward",
          "symbol": "IGSS",
          "kind": "electrical",
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          "conditions": "VGS=20V, VDS=0V",
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          "symbol": "IGSS",
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          "min": -100,
          "typ": null,
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          "conditions": "VGS=-20V, VDS=0V",
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        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(TH)",
          "kind": "electrical",
          "unit": "V",
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          "conditions": "VDS=VGS, ID=250μA",
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        {
          "name": "Static Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "VGS=10V, ID=25A",
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        {
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          "kind": "electrical",
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          "name": "Gate-Source Voltage",
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          "typ": null,
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        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "",
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        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "Note 2: repetitive rating, pulse width limited by maximum junction temperature",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Avalanche Energy Single Pulsed",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 32,
          "conditions": "Note 3: L=0.1mH, IAS=25A, VDD=30V, RG=20Ω, Starting TJ=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Peak Diode Recovery dv/dt",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 2.9,
          "conditions": "Note 4: ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Power Dissipation (TO-251/TO-252, TO-252D)",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 51,
          "conditions": "",
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        {
          "name": "Junction Temperature",
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        {
          "name": "Operation and Storage Temperature",
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          "unit": "°C",
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        {
          "name": "Maximum Continuous Drain-Source Diode Forward Current",
          "symbol": "IS",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 50,
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        {
          "name": "Maximum Pulsed Drain-Source Diode Forward Current",
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          "unit": "A",
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          "conditions": "",
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        },
        {
          "name": "Junction to Ambient (TO-251/TO-252, TO-252D)",
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          "unit": "°C/W",
          "min": null,
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          "conditions": "",
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        {
          "name": "Junction to Case (TO-251/TO-252, TO-252D)",
          "symbol": "θJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 2.45,
          "conditions": "Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
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