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UTT50N06G
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UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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UTT50N06G
UTC Unisonic Tech · MOSFETs · TO-252
UTT50N06G from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant (UTT50N06G-TN3-R); the datasheet rates gate-source voltage VGSS at ±20 V on page 3. |
| 2 | D | passive | Drain terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant; the datasheet rates continuous drain current ID at 50 A and pulsed IDM at 100 A on page 3. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant; the datasheet gives no separate pin-specific limit for it. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS=60V, VGS=0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 15 | mΩ | VGS=10V, ID=25A | 4 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 20 | mΩ | VGS=4.5V, ID=25A | 4 | ||
| Drain-Source Voltage | VDSS | 60 | V | 3 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 3 | ||
| Continuous Drain Current | ID | 50 | A | 3 | |||
| Pulsed Drain Current | IDM | 100 | A | Note 2: repetitive rating, pulse width limited by maximum junction temperature | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 32 | mJ | Note 3: L=0.1mH, IAS=25A, VDD=30V, RG=20Ω, Starting TJ=25°C | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 2.9 | V/ns | Note 4: ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ=25°C | 3 | ||
| Power Dissipation (TO-251/TO-252, TO-252D) | PD | 51 | W | 3 | |||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operation and Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 50 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 100 | A | 4 | |||
| Junction to Ambient (TO-251/TO-252, TO-252D) | θJA | 110 | °C/W | 3 | |||
| Junction to Case (TO-251/TO-252, TO-252D) | θJC | 2.45 | °C/W | Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | 3 |
CAD (KiCad official)
- Symbol:
UTT50N06G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
utt50n06g-etched.step/utt50n06g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);utt50n06g.step/utt50n06g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256
c882c057145c0137, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# UTT50N06G
**UTC Unisonic Tech** · MOSFETs · TO-252
UTT50N06G from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant (UTT50N06G-TN3-R); the datasheet rates gate-source voltage VGSS at ±20 V on page 3. |
| 2 | D | passive | Drain terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant; the datasheet rates continuous drain current ID at 50 A and pulsed IDM at 100 A on page 3. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET, as given in the ordering table pin assignment for the TO-252 variant; the datasheet gives no separate pin-specific limit for it. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS=60V, VGS=0V | 4 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 4 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS=-20V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 1 | | 3 | V | VDS=VGS, ID=250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | | 15 | mΩ | VGS=10V, ID=25A | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | | 20 | mΩ | VGS=4.5V, ID=25A | 4 |
| Drain-Source Voltage | VDSS | | | 60 | V | | 3 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 3 |
| Continuous Drain Current | ID | | | 50 | A | | 3 |
| Pulsed Drain Current | IDM | | | 100 | A | Note 2: repetitive rating, pulse width limited by maximum junction temperature | 3 |
| Avalanche Energy Single Pulsed | EAS | | | 32 | mJ | Note 3: L=0.1mH, IAS=25A, VDD=30V, RG=20Ω, Starting TJ=25°C | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 2.9 | V/ns | Note 4: ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ=25°C | 3 |
| Power Dissipation (TO-251/TO-252, TO-252D) | PD | | | 51 | W | | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Operation and Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 50 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 100 | A | | 4 |
| Junction to Ambient (TO-251/TO-252, TO-252D) | θJA | | | 110 | °C/W | | 3 |
| Junction to Case (TO-251/TO-252, TO-252D) | θJC | | | 2.45 | °C/W | Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | 3 |
## CAD (KiCad official)
- Symbol: `UTT50N06G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `utt50n06g-etched.step` / `utt50n06g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `utt50n06g.step` / `utt50n06g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078361216802816) (9 pp, sha256 `c882c057145c0137`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/utt50n06g-datasheet.pdf)