component
UTT25P10L-TN3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUTT25P10L-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252
UTT25P10L-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the datasheet rates gate-source voltage VGSS at ±20 V. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet rates drain-source voltage VDSS at -100 V and continuous drain current ID at -25 A. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives no separate limit for this pin beyond the device ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -100 | V | TC=25°C | 3 | ||
| Drain-Gate Voltage (RGS=20kΩ) | VDGR | -100 | V | RGS=20kΩ, TC=25°C | 3 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TC=25°C | 3 | |
| Continuous Drain Current | ID | -25 | A | TC=25°C | 3 | ||
| Pulsed Drain Current (Note 2) | IDM | -60 | A | TC=25°C | 3 | ||
| Single Pulsed Avalanche Energy (Note 3) | EAS | 70 | mJ | L=0.35mH, IAS=20A, VDD=50V, RG=25Ω, Starting TJ=25°C | 3 | ||
| Power Dissipation, TO-252 | PD | 50 | W | TC=25°C | 3 | ||
| Junction Temperature | TJ | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | ID=-250µA, VGS=0V | 3 | ||
| Drain-Source Leakage Current | IDSS | -1 | µA | VDS=Rated BVDSS, VGS=0V | 3 | ||
| Drain-Source Leakage Current | IDSS | -25 | µA | VDS=0.8xRated BVDSS, VGS=0V, TC=125°C | 3 | ||
| Forward Gate-Source Leakage Current | IGSS | 100 | nA | VGS=+20V, VDS=0V | 3 | ||
| Reverse Gate-Source Leakage Current | IGSS | -100 | nA | VGS=-20V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | -3 | -1 | V | VDS=VGS, ID=-250µA | 3 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.15 | Ω | VGS=-10V, ID=-25A | 3 | ||
| Junction to Case, TO-252 | θJC | 2.5 | °C/W | Junction to Case, TO-252 | 3 |
CAD (KiCad official)
- Symbol:
UTT25P10L-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
utt25p10l-tn3-r-etched.step/utt25p10l-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);utt25p10l-tn3-r.step/utt25p10l-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256
cca22469137de3c8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).