# UTM6016G-VB

**VBsemi Elec** · MOSFETs · SO-8

UTM6016G-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied internally with the other source pins. |
| 2 | S | passive | Source of the N-channel MOSFET, tied internally with the other source pins. |
| 3 | S | passive | Source of the N-channel MOSFET, tied internally with the other source pins. |
| 4 | G | input | Gate of the N-channel MOSFET, with VGS rated at ±20 V maximum. |
| 5 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 60 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 60 V. |
| 7 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 60 V. |
| 8 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 60 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 25 | A | TA = 25 °C | 1 |
| Avalanche Current | IAS |  |  | 15 | A | L = 0.1 mH | 1 |
| Single-Pulse Avalanche Energy | EAS |  |  | 11.2 | mJ | L = 0.1 mH | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA |  | 38 | 50 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF |  | 20 | 25 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 25 |  |  | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.012 | Ω | VGS = 10 V, ID = 4.6 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.015 | Ω | VGS = 4.5 V, ID = 4.2 A | 2 |
| Forward Transconductance | gfs |  | 20 |  | S | VDS = 15 V, ID = 4.6 A | 2 |
| Total Gate Charge | Qg |  | 21 | 32 | nC | VDS = 30 V, VGS = 10 V, ID = 4.6 A | 2 |
| Gate Resistance | Rg |  | 3.3 | 5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 20 | 30 | ns | VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 150 | 225 | ns | VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 20 | 30 | ns | VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 60 | 90 | ns | VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 10 | 15 | ns | VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 15 | 25 | ns | VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 25 | 40 | ns | VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 10 | 15 | ns | VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Pulse Diode Forward Current | ISM |  |  | 25 | A |  | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 2 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 25 | 50 | ns | IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 25 | 50 | nC | IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | 55 |  | mV/°C | ID = 250 µA | 2 |
| Output Capacitance | Coss |  | 90 |  | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 55 |  | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 2 |

## CAD (KiCad official)

- Symbol: `UTM6016G-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `utm6016g-vb-etched.step` / `utm6016g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `utm6016g-vb.step` / `utm6016g-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/utm6016g-vb-datasheet.pdf) (9 pp, sha256 `f76e6f66bca59089`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/utm6016g-vb-datasheet.pdf)