# UT9564G-SO8-R

**UTC Unisonic Tech** · MOSFETs · SOP-8

UT9564G-SO8-R from UTC Unisonic Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source and are tied together on the SOP-8 package. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source and are tied together on the SOP-8 package. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source and are tied together on the SOP-8 package. |
| 4 | G | input | Gate terminal of the MOSFET; the datasheet rates the gate-source voltage at ±25 V (VGS). |
| 5 | D | passive | Drain terminal of the MOSFET; pins 5 through 8 are all drain and are tied together on the SOP-8 package, with drain-source voltage rated at -40 V (VDS). |
| 6 | D | passive | Drain terminal of the MOSFET; pins 5 through 8 are all drain and are tied together on the SOP-8 package, with drain-source voltage rated at -40 V (VDS). |
| 7 | D | passive | Drain terminal of the MOSFET; pins 5 through 8 are all drain and are tied together on the SOP-8 package, with drain-source voltage rated at -40 V (VDS). |
| 8 | D | passive | Drain terminal of the MOSFET; pins 5 through 8 are all drain and are tied together on the SOP-8 package, with drain-source voltage rated at -40 V (VDS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 |  |  | V |  | 3 |
| Gate-Source Voltage | VGS | -25 |  | 25 | V |  | 3 |
| Continuous Drain Current | ID | -7.3 |  |  | A | TA=25°C | 3 |
| Continuous Drain Current | ID | -5.9 |  |  | A | TA=70°C | 3 |
| Pulsed Drain Current | IDM | -30 |  |  | A | Note 1: pulse width limited by max junction temperature | 3 |
| Power Dissipation | PD |  |  | 2.5 | W | TA=25°C | 3 |
| Junction Temperature | TJ | -55 |  | 150 | °C |  | 3 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 3 |
| Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | ID=-250µA, VGS=0V | 3 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | µA | VDS=-40V, VGS=0V, TJ=25°C | 3 |
| Drain-Source Leakage Current | IDSS |  |  | -25 | µA | VDS=-32V, VGS=0V, TJ=70°C | 3 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±25V | 3 |
| Gate Threshold Voltage | VGS(TH) | -1 |  | -3 | V | VDS=VGS, ID=-250µA | 3 |
| Input Capacitance | CISS |  | 2240 | 3600 | pF |  | 3 |
| Total Gate Charge | QG |  | 27 | 43 | nC |  | 3 |
| Maximum Body-Diode Continuous Current | IS | -7.3 |  |  | A |  | 3 |
| Maximum Body-Diode Pulsed Current | ISM | -30 |  |  | A |  | 3 |
| Thermal Resistance Junction to Ambient (SOP-8) | θJA |  | 50 |  | °C/W | Surface mounted on 1 in² copper pad of FR4 board, t ≤10sec | 3 |
| Thermal Resistance Junction to Ambient (minimum copper pad) | θJA |  | 125 |  | °C/W | Mounted on minimum copper pad | 3 |
| Linear Derating Factor |  |  | 0.02 |  | W/°C |  | 3 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/ T △ J |  | -0.03 |  | V/°C | Reference to 25°C, ID=-1mA | 3 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 28 |  | mΩ | VGS=-10V, ID=-7A | 3 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 40 |  | mΩ | VGS=-4.5V, ID=-5A | 3 |
| Forward Transconductance | gFS |  | 13 |  | S | VDS=-10V, ID=-7A | 3 |
| Output Capacitance | COSS |  | 300 |  | pF |  | 3 |
| Reverse Transfer Capacitance | CRSS |  | 250 |  | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 |
| Gate to Source Charge | QGS |  | 6 |  | nC |  | 3 |
| Gate to Drain Charge | QGD |  | 14 |  | nC | VGS=-4.5V, VDS=-32V, ID=-7A | 3 |
| Turn-ON Delay Time | tD(ON) |  | 14 |  | ns |  | 3 |
| Rise Time | tR |  | 8 |  | ns |  | 3 |
| Turn-OFF Delay Time | tD(OFF) |  | 46 |  | ns |  | 3 |
| Fall-Time | tF |  | 17 |  | ns | VGS=-10V, VDS=-20V, ID=-1A, RG=3.3Ω, RD=20Ω | 3 |
| Drain-Source Diode Forward Voltage | VSD |  | -1.2 |  | V | IS=-2A, VGS=0V | 3 |
| Reverse Recovery Time | tRR |  | 144 |  | ns |  | 3 |
| Reverse Recovery Charge | QRR |  | 110 |  | nC | IS=-7A, VGS=0V, dI/dt=100A/µs | 3 |

## CAD (KiCad official)

- Symbol: `UT9564G-SO8-R`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ut9564g-so8-r-etched.step` / `ut9564g-so8-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ut9564g-so8-r.step` / `ut9564g-so8-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586175054727667712) (4 pp, sha256 `6a1253dcd0b44587`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ut9564g-so8-r-datasheet.pdf)