component
UT4421G-SO8-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| README.md | 17d ago |
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| ut4421g-so8-r-etched.step | 17d ago |
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UT4421G-SO8-R
UTC Unisonic Tech · MOSFETs · SOP-8
UT4421G-SO8-R from UTC Unisonic Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the body-diode maximum continuous current is rated IS -4.2 A. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the body-diode maximum continuous current is rated IS -4.2 A. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the body-diode maximum continuous current is rated IS -4.2 A. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated VGSS ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated VDSS -60 V and continuous drain current is -6.2 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated VDSS -60 V and continuous drain current is -6.2 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated VDSS -60 V and continuous drain current is -6.2 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated VDSS -60 V and continuous drain current is -6.2 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -6.2 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -5 | A | TA=70°C | 2 | ||
| Pulsed Drain Current | IDM | -40 | A | Pulsed (Note 2) | 2 | ||
| Power Dissipation | PD | 2 | W | Note 1 | 2 | ||
| Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Junction to Ambient Thermal Resistance | θJA | 75 | °C/W | 2 | |||
| Junction to Case Thermal Resistance | θJC | 30 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID=-250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-48V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS=-48V, VGS=0V, TJ=55°C | 3 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | Forward VGS=+20V, VDS=0V | 3 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | Reverse VGS=-20V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | -1 | -2 | -3 | V | VDS=VGS, ID=-250µA | 3 |
| On State Drain Current | ID(ON) | -40 | A | VGS=-10V, VDS=-5V | 3 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 43 | 48 | mΩ | VGS=-10V, ID=-6.2A | 3 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 58 | 63 | mΩ | VGS=-4.5V, ID=-5A | 3 | |
| Forward Transconductance | gFS | 18 | S | VDS=-5V, ID=-6.2A | 3 | ||
| Input Capacitance | CISS | 2417 | 2900 | pF | 3 | ||
| Gate Resistance | RG | 1.9 | 2.3 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 | |
| Total Gate Charge | QG | 46.5 | 55 | nC | 3 | ||
| Maximum Body-Diode Continuous Current | IS | -4.2 | A | 3 | |||
| Diode Forward Voltage | VSD | -0.74 | -1 | V | IS=-1A,VGS=0V | 3 | |
| Body Diode Reverse Recovery Time | trr | 34 | 42 | ns | 3 | ||
| Output Capacitance | COSS | 179 | pF | 3 | |||
| Reverse Transfer Capacitance | CRSS | 120 | pF | 3 | |||
| Total Gate Charge | QG | 22.7 | nC | VGS=-4.5V, VDS=-30V, ID=-6.2A | 3 | ||
| Gate to Source Charge | QGS | 9.1 | nC | 3 | |||
| Gate to Drain Charge | QGD | 9.2 | nC | 3 | |||
| Turn-ON Delay Time | tD(ON) | 9.8 | ns | 3 | |||
| Rise Time | tR | 6.1 | ns | 3 | |||
| Turn-OFF Delay Time | tD(OFF) | 44 | ns | 3 | |||
| Fall-Time | tF | 12.7 | ns | 3 | |||
| Body Diode Reverse Recovery Charge | Qrr | 47 | nC | IF=-6.2A, dI/dt=100A/µS | 3 |
CAD (KiCad official)
- Symbol:
UT4421G-SO8-R - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ut4421g-so8-r-etched.step/ut4421g-so8-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ut4421g-so8-r.step/ut4421g-so8-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256
472ec5d8bc45ae4a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).