component
UT3N06G-AE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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UT3N06G-AE3-VB
VBsemi Elec · MOSFETs · SOT-23
UT3N06G-AE3-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with VGS(th) specified at 1 to 3 V and RDS(on) of 0.075 Ω at VGS = 10 V. |
| 2 | S | passive | Source; continuous source-drain body diode current is 1.39 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage rated 60 V, continuous drain current 4.0 A at TC = 25 °C and pulsed drain current 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 4 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 3.4 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 3.1 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | 2.5 | A | TJ = 150 °C, TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 1.39 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 0.91 | A | TA = 25 °C | 1 | ||
| Avalanche Current | IAS | 6 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 1.8 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 1.66 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.06 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.09 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.7 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 90 | 115 | °C/W | t ≤ 5 s | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 60 | 75 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | 60 | V | VDS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.086 | Ω | VGS = 4.5 V, ID = 1.7 A | 2 | ||
| Gate Resistance | Rg | 0.6 | 2.2 | 5.1 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 15 | 23 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 | |
| Rise Time | tr | 10 | 15 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 10 | 15 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 | |
| Fall Time | tf | 7 | 10.5 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 | |
| Rise Time | tr | 16 | 24 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 11 | 17 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 | |
| Fall Time | tf | 11 | 17 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 2.19 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 7 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 1.5 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 15 | 23 | ns | IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 10 | 15 | nC | IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
UT3N06G-AE3-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ut3n06g-ae3-vb-etched.step/ut3n06g-ae3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ut3n06g-ae3-vb.step/ut3n06g-ae3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
dde391f02d9a58ef, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).