component
UT3N06G-AB3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUT3N06G-AB3-R
UTC Unisonic Tech · MOSFETs · SOT-89
UT3N06G-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGSS of ±20 V with a gate threshold VGS(TH) of 1.0 to 3.0 V. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage VDSS of 60 V and a continuous drain current ID of 3.0 A at VGS=4.5 V, TA=25°C. |
| 3 | S | passive | Source terminal, the reference terminal for the VGS and VDS ratings listed in the datasheet. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 3 | A | VGS=4.5V, TA=25°C (Note 2) | 2 | ||
| Pulsed Drain Current | IDM | 10 | A | Notes 3, 4: pulse width ≤300µs, duty cycle≤2% | 2 | ||
| Power Dissipation SOT-89 | PD | 0.69 | W | TA=25°C, SOT-89 | 2 | ||
| Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=60V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS=VGS, ID=250µA | 2 | |
| Drain to Source On-state Resistance | RDS(ON) | 90 | mΩ | VGS=10V, ID=3A | 2 | ||
| Drain to Source On-state Resistance | RDS(ON) | 120 | mΩ | VGS=4.5V, ID=2A | 2 | ||
| Input Capacitance | CISS | 490 | 780 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | |
| Turn-ON Rise Time | tR | 5 | 42 | ns | VGS=10V, VDS=30V, ID=1A, RD=30Ω, RG=3.3Ω | 2 | |
| Turn-OFF Fall-Time | tF | 3 | 58 | ns | VGS=10V, VDS=30V, ID=1A, RD=30Ω, RG=3.3Ω | 2 | |
| Total Gate Charge | QG | 6 | 10 | nC | VGS=4.5V, VDS=48V, ID=3A | 2 | |
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | IS=1.2A, VGS=0V | 2 | ||
| Junction to Ambient (SOT-89) | θJA | 180 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
UT3N06G-AB3-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
ut3n06g-ab3-r-etched.step/ut3n06g-ab3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ut3n06g-ab3-r.step/ut3n06g-ab3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256
b11af2a379399e5b, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).