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UT3415G-AE3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUT3415G-AE3-R
UTC Unisonic Tech · MOSFETs · SOT-23
UT3415G-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±8 V (VGSS). |
| 2 | S | passive | Source terminal of the P-channel MOSFET. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -20 V (VDSS) with DC drain current of -4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | 3 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 3 | ||
| Drain Current DC | ID | -4 | A | 3 | |||
| Pulsed Drain Current | IDM | -8 | A | Pulsed, repetitive rating (Note 2): pulse width limited by maximum junction temperature | 3 | ||
| Single Avalanche Energy | EAS | 48 | mJ | L=0.1mH, IAS=-31.1A, VDD=-20V, RG=25Ω, Starting TJ=25°C (Note 3) | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 1.38 | V/ns | ISD ≤-1.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C (Note 4) | 3 | ||
| Power Dissipation | PD | 0.7 | W | SOT-23 package | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 3 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=+8V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-8V, VDS=0V | 4 | ||
| Drain-Source Leakage Current | IDSS | -1 | µA | VDS=-20V, VGS=0V | 4 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0 V, ID=-250 µA | 4 | ||
| Gate Threshold Voltage | VGS(TH) | -0.3 | -0.9 | V | VDS=VGS, ID=-250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 45 | mΩ | VGS=-4.5V, ID=-4.0A | 4 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 62 | mΩ | VGS=-2.5V, ID=-4.0A | 4 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 84 | mΩ | VGS=-1.8V, ID=-2.0A | 4 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 105 | mΩ | VGS=-1.5V, ID=-1.0A | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | -4 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | -8 | A | 4 | |||
| Diode Forward Voltage | VSD | -1.4 | V | IF=-4.0A, VGS=0V | 4 | ||
| Junction to Ambient Thermal Resistance (SOT-23) | θJA | 177 | °C/W | SOT-23; device mounted on FR-4 PC board, 2oz copper, with 1 inch square copper plate | 3 |
CAD (KiCad official)
- Symbol:
UT3415G-AE3-R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ut3415g-ae3-r-etched.step/ut3415g-ae3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ut3415g-ae3-r.step/ut3415g-ae3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256
8a5fbcb6dc163c33, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).