component
UT3401G-AE3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6h ago |
| viewers | 6h ago |
| package.json | 6h ago |
| page.json | 6h ago |
| README.md | 6h ago |
| ut3401g-ae3-r-etched.glb | 6h ago |
| ut3401g-ae3-r-etched.step | 6h ago |
| ut3401g-ae3-r-hero.glb | 6h ago |
| ut3401g-ae3-r-hero.overlay.json | 6h ago |
| ut3401g-ae3-r.glb | 6h ago |
| ut3401g-ae3-r.kicad_mod | 6h ago |
| ut3401g-ae3-r.kicad_sym | 6h ago |
| ut3401g-ae3-r.lbr | 6h ago |
| ut3401g-ae3-r.step | 6h ago |
UT3401G-AE3-R
UTC Unisonic Tech · MOSFETs · SOT-23
UT3401G-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the UT3401 P-channel enhancement-mode power MOSFET, labeled '1.Source' in the symbol and listed under pin 1 in the SOT-23 pin assignment. |
| 2 | G | input | Gate terminal of the UT3401 P-channel enhancement-mode power MOSFET, labeled '2.Gate' in the symbol and listed under pin 2 in the SOT-23 pin assignment; gate-source voltage is rated at ±12 V (VGSS). |
| 3 | D | passive | Drain terminal of the UT3401 P-channel enhancement-mode power MOSFET, labeled '3.Drain' in the symbol and listed under pin 3 in the SOT-23 pin assignment; drain-source voltage is rated at -30 V (VDSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(TH) | -0.7 | -1 | -1.3 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 42 | 50 | mΩ | VGS=-10V, ID=-4.2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 53 | 65 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 80 | 120 | mΩ | VGS=-2.5V, ID=-1A | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250μA, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Drain-Source Diode Forward Voltage | VSD | -0.75 | -1 | V | VDS=0V, IS=-1A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -2.2 | A | 2 | |||
| Drain-Source Voltage | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 2 | ||
| Continuous Drain Current (Note 1) | ID | -4.2 | A | 2 | |||
| Pulsed Drain Current (Note 2) | IDM | -30 | A | 2 | |||
| Power Dissipation (Note 1) | PD | 1.4 | W | 2 | |||
| Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | θJA | 65 | 90 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
UT3401G-AE3-R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ut3401g-ae3-r-etched.step/ut3401g-ae3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ut3401g-ae3-r.step/ut3401g-ae3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256
4794320ca8b32598, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).