# US3JB

**Shandong Jingdao Microelectronics** · Fast Recovery / High Efficiency Diodes · SMB

US3JB from Shandong Jingdao Microelectronics, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the ultrafast recovery rectifier; the datasheet gives no pin-specific electrical limits, so the device ratings in the maximum ratings table apply. |
| 2 | Anode | passive | Anode terminal of the ultrafast recovery rectifier; the datasheet gives no pin-specific electrical limits, so the device ratings in the maximum ratings table apply. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (US3JB column) | VRRM |  |  | 600 | V |  | 1 |
| Maximum RMS Voltage (US3JB column) | VRMS |  |  | 420 | V |  | 1 |
| Maximum DC Blocking Voltage (US3JB column) | VDC |  |  | 600 | V |  | 1 |
| Maximum Average Forward Rectified Current | IF(AV) |  |  | 3 | A |  | 1 |
| Peak Forward Surge Current | IFSM |  |  | 90 | A | 8.3 ms single half sine wave superimposed on rated load (JEDEC method) | 1 |
| Maximum Instantaneous Forward Voltage | VF |  |  | 1.3 | V | at IF = 3 A | 1 |
| Maximum DC Reverse Current at Rated DC Blocking Voltage, Ta = 25 °C | IR |  |  | 5 | μA | at rated DC blocking voltage, Ta = 25 °C | 1 |
| Maximum DC Reverse Current at Rated DC Blocking Voltage, Ta = 125 °C | IR |  |  | 100 | μA | at rated DC blocking voltage, Ta = 125 °C | 1 |
| Operating and Storage Temperature Range | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Typical Thermal Resistance, junction to ambient | RθJA |  | 45 |  | °C/W |  | 1 |
| Typical Thermal Resistance, junction to case | RθJC |  | 15 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `US3JB`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `us3jb-etched.step` / `us3jb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `us3jb.step` / `us3jb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603039050924105728) (3 pp, sha256 `2ae7b42c4e442220`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/us3jb-datasheet.pdf)