component
US2BA
Public Made by Adomby adom
onsemi Fast Recovery / High Efficiency Diodes, SMA(DO-214AC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUS2BA
onsemi · Fast Recovery / High Efficiency Diodes · SMA(DO-214AC)
US2BA from onsemi, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal, marked by the color band on the package; the datasheet uses the cathode pin as the reference for the junction-to-lead thermal characteristic (RθJL = 31 °C/W typical). |
| 2 | Anode | passive | Anode terminal of the rectifier, opposite the cathode; the device is rated for repetitive peak reverse voltage up to 1000 V (US2MA) and average forward rectified current of 1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 100 | V | 2 | |||
| RMS Reverse Voltage | VRMS | 70 | V | 2 | |||
| DC Blocking Voltage | VDC | 100 | V | 2 | |||
| Average Forward Rectified Current | IF(AV) | 1.5 | A | 2 | |||
| Peak Forward Surge Current | IFSM | 50 | A | 8.3 ms single half-sine wave, superimposed on rated load | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Maximum Instantaneous Forward Voltage | VF | 1 | V | at Rated IF(AV), pulse test | 2 | ||
| Maximum Reverse Current | IR | 5 | µA | at Rated VR, TJ = 25°C | 2 | ||
| Maximum Reverse Current | IR | 100 | µA | at Rated VR, TJ = 125°C | 2 | ||
| Typical Thermal Resistance, Junction-to-Ambient | RθJA | 189 | °C/W | Device mounted at minimum pad | 2 | ||
| Typical Thermal Characteristics, Junction-to-Lead (with reference to cathode pin) | RθJL | 31 | °C/W | with reference to cathode pin | 2 |
CAD (KiCad official)
- Symbol:
US2BA - Footprint:
Diode_SMD:D_SMA - 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files:
us2ba-etched.step/us2ba-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);us2ba.step/us2ba.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
042650c3157e53ed, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).