component
US2B
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Shandong Jingdao Microelectronics Diodes - Fast Recovery Rectifiers, SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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US2B
Shandong Jingdao Microelectronics · Diodes - Fast Recovery Rectifiers · SMA
US2B from Shandong Jingdao Microelectronics, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the US2B ultrafast rectifier (50 to 1000 V family, US2B rated 100 V VRRM, 2 A forward current). |
| 2 | Anode | passive | Anode of the US2B ultrafast rectifier (US2B rated 100 V VRRM, 2 A forward current). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 70 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 100 | V | 1 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 2 | A | at Tc = 125 °C | 1 | ||
| Peak Forward Surge Current | IFSM | 50 | A | 8.3 ms Single Half Sine Wave Superimposed on Rated Load | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 1 | V | at 2 A | 1 | ||
| Maximum DC Reverse Current | IR | 5 | μA | Ta = 25 °C, at Rated DC Blocking Voltage | 1 | ||
| Maximum DC Reverse Current | IR | 100 | μA | Ta = 125 °C, at Rated DC Blocking Voltage | 1 | ||
| Maximum Reverse Recovery Time | trr | 50 | ns | IF = 0.5 A, IR = 1 A, Irr = 0.25 A | 1 | ||
| Typical Thermal Resistance Junction to Ambient | RθJA | 65 | °C/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 | ||
| Typical Thermal Resistance Junction to Case | RθJC | 20 | °C/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 | ||
| Operating and Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
US2B - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
us2b-etched.step/us2b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);us2b.step/us2b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (3 pp, sha256
3ae11aa3ba6f7b63, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# US2B
**Shandong Jingdao Microelectronics** · Diodes - Fast Recovery Rectifiers · SMA
US2B from Shandong Jingdao Microelectronics, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the US2B ultrafast rectifier (50 to 1000 V family, US2B rated 100 V VRRM, 2 A forward current). |
| 2 | Anode | passive | Anode of the US2B ultrafast rectifier (US2B rated 100 V VRRM, 2 A forward current). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | | | 100 | V | | 1 |
| Maximum RMS Voltage | VRMS | | | 70 | V | | 1 |
| Maximum DC Blocking Voltage | VDC | | | 100 | V | | 1 |
| Maximum Average Forward Rectified Current | IF(AV) | | | 2 | A | at Tc = 125 °C | 1 |
| Peak Forward Surge Current | IFSM | | | 50 | A | 8.3 ms Single Half Sine Wave Superimposed on Rated Load | 1 |
| Maximum Instantaneous Forward Voltage | VF | | | 1 | V | at 2 A | 1 |
| Maximum DC Reverse Current | IR | | | 5 | μA | Ta = 25 °C, at Rated DC Blocking Voltage | 1 |
| Maximum DC Reverse Current | IR | | | 100 | μA | Ta = 125 °C, at Rated DC Blocking Voltage | 1 |
| Maximum Reverse Recovery Time | trr | | | 50 | ns | IF = 0.5 A, IR = 1 A, Irr = 0.25 A | 1 |
| Typical Thermal Resistance Junction to Ambient | RθJA | | 65 | | °C/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 |
| Typical Thermal Resistance Junction to Case | RθJC | | 20 | | °C/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 |
| Operating and Storage Temperature Range | Tj, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `US2B`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA (KiCad packages3D, STEP)
- 3D model files: `us2b-etched.step` / `us2b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `us2b.step` / `us2b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](docs/us2b-datasheet.pdf) (3 pp, sha256 `3ae11aa3ba6f7b63`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/us2b-datasheet.pdf)