component
US1M-AT
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Agertech Diodes - Fast Recovery Rectifiers, SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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US1M-AT
Agertech · Diodes - Fast Recovery Rectifiers · SMA
US1M-AT from Agertech, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the ultrafast rectifier diode; US1M-AT is rated for 1000 V VRRM, 700 V VRMS and 1000 V DC blocking voltage, with 1.0 A average forward current. |
| 2 | Anode | passive | Anode of the ultrafast rectifier diode; maximum forward voltage is 1.65 V at 1.0 A for US1M-AT, with 35 A peak forward surge current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 1000 | V | Ratings at 25℃ ambient | 1 | ||
| Maximum RMS Voltage | VRMS | 700 | V | Ratings at 25℃ ambient | 1 | ||
| Maximum DC Blocking Voltage | VDC | 1000 | V | Ratings at 25℃ ambient | 1 | ||
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | TC=125℃ | 1 | ||
| Peak Forward Surge Current | IFSM | 35 | A | 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) | 1 | ||
| Maximum Forward Voltage | VF | 1.65 | V | at 1.0 A | 1 | ||
| Maximum DC Reverse Current | IR | 5 | uA | at Rated DC Blocking Voltage, TA=25℃ | 1 | ||
| Maximum DC Reverse Current | IR | 100 | uA | at Rated DC Blocking Voltage, TA=125℃ | 1 | ||
| Maximum Reverse Recovery Time | Trr | 75 | nS | IF=0.5A, IR=1A, Irr=0.25A | 1 | ||
| Typical Thermal Resistance | RθJA | 75 | ℃/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
US1M-AT - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
us1m-at-etched.step/us1m-at-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);us1m-at.step/us1m-at.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Agertech datasheet (3 pp, sha256
44efddbd81f93e4c, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# US1M-AT
**Agertech** · Diodes - Fast Recovery Rectifiers · SMA
US1M-AT from Agertech, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the ultrafast rectifier diode; US1M-AT is rated for 1000 V VRRM, 700 V VRMS and 1000 V DC blocking voltage, with 1.0 A average forward current. |
| 2 | Anode | passive | Anode of the ultrafast rectifier diode; maximum forward voltage is 1.65 V at 1.0 A for US1M-AT, with 35 A peak forward surge current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | | | 1000 | V | Ratings at 25℃ ambient | 1 |
| Maximum RMS Voltage | VRMS | | | 700 | V | Ratings at 25℃ ambient | 1 |
| Maximum DC Blocking Voltage | VDC | | | 1000 | V | Ratings at 25℃ ambient | 1 |
| Maximum Average Forward Rectified Current | IF(AV) | | | 1 | A | TC=125℃ | 1 |
| Peak Forward Surge Current | IFSM | | | 35 | A | 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) | 1 |
| Maximum Forward Voltage | VF | | | 1.65 | V | at 1.0 A | 1 |
| Maximum DC Reverse Current | IR | | | 5 | uA | at Rated DC Blocking Voltage, TA=25℃ | 1 |
| Maximum DC Reverse Current | IR | | | 100 | uA | at Rated DC Blocking Voltage, TA=125℃ | 1 |
| Maximum Reverse Recovery Time | Trr | | | 75 | nS | IF=0.5A, IR=1A, Irr=0.25A | 1 |
| Typical Thermal Resistance | RθJA | | 75 | | ℃/W | P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas | 1 |
| Operating and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `US1M-AT`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA (KiCad packages3D, STEP)
- 3D model files: `us1m-at-etched.step` / `us1m-at-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `us1m-at.step` / `us1m-at.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Agertech datasheet](docs/us1m-at-datasheet.pdf) (3 pp, sha256 `44efddbd81f93e4c`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/us1m-at-datasheet.pdf)