component
US1K_R1_00001
Public Made by Adomby adom
PANJIT International Fast Recovery / High Efficiency Diodes, SMA(DO-214AC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUS1K_R1_00001
PANJIT International · Fast Recovery / High Efficiency Diodes · SMA(DO-214AC)
US1K_R1_00001 from PANJIT International, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal, identified by the color band on the package, with a maximum DC blocking voltage of 800 V and maximum average forward current of 1 A for the US1K variant. |
| 2 | Anode | passive | Anode terminal of the ultrafast rectifier, rated for a peak forward surge current of 30 A (8.3 ms single half sine-wave) and a maximum forward voltage of 1.7 V at 1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | 800 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 560 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 800 | V | 1 | |||
| Maximum Average Forward Current | IF(AV) | 1 | A | 1 | |||
| Peak Forward Surge Current | IFSM | 30 | A | 8.3ms single half sine-wave superimposed on rated load | 1 | ||
| Maximum Forward Voltage | VF | 1.7 | V | at 1A; US1K is in the 600V~1000V group (column value 1.7) | 1 | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage | IR | 1 | μA | TJ = 25 C, at rated DC blocking voltage | 1 | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage | IR | 100 | μA | TJ = 125 C, at rated DC blocking voltage | 1 | ||
| Typical Junction Capacitance | CJ | 17 | pF | Measured at 1 MHz and applied VR = 4 V (Note 2) | 1 | ||
| Typical Thermal Resistance, junction to lead | RθJL | 30 | OC / W | Note 3: 8mm2 (0.013mm thick) land areas | 1 | ||
| Typical Thermal Resistance, junction to case | RθJC | 28 | OC / W | Note 4: Mounted on 100cm2 FR4 PCB | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | OC | 1 |
CAD (KiCad official)
- Symbol:
US1K_R1_00001 - Footprint:
Diode_SMD:D_SMA - 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files:
us1k-r1-00001-etched.step/us1k-r1-00001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);us1k-r1-00001.step/us1k-r1-00001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (5 pp, sha256
635abbc1fbc79135, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).