Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

US1DWF-7

Diodes Incorporated · Fast Recovery / High Efficiency Diodes · SOD-123F

US1DWF-7 from Diodes Incorporated, in a SOD-123F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOD-123F
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage V(BR)R 200 V IR = 10µA 2
Peak Repetitive Reverse Voltage VRRM 200 V 2
Working Peak Reverse Voltage VRWM 200 V 2
DC Blocking Voltage VR 200 V 2
Average Rectified Output Current IO 1 A 2
Non-Repetitive Peak Forward Surge Current IFSM 30 A 8.3ms Single Half Sine-Wave Superimposed on Rated Load 2
Forward Voltage at TJ = +25°C VF 0.95 V IF = 1A, TJ = +25°C 2
Reverse Leakage Current at TJ = +25°C IR 0.1 5 µA VR = 200V, TJ = +25°C 2
Reverse Leakage Current at TJ = +125°C IR 1 100 µA VR = 200V, TJ = +125°C 2
Reverse Recovery Time tRR 30 35 ns IF = 0.5A, IR = 1.0A, IRR = 0.25A 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Typical Thermal Resistance Junction to Case RθJC 34 °C/W 2
Typical Thermal Resistance Junction to Ambient RθJA 96 °C/W Note 5: device mounted on FR-4 substrate, 25.425.4mm, 2oz, single-sided, 2.12.1mm copper pad 2
Typical Thermal Resistance Junction to Ambient RθJA 87 °C/W Note 6: device mounted on FR-4 substrate, 0.4"*0.5", 2oz, single-sided, 0.2"*0.25" copper pad 2
Typical Total Capacitance CT 14 pF VR = 4V, f=1MHz 2
Forward Voltage at TJ = +25°C (typical) VF 0.9 V IF = 1A, TJ = +25°C 2
Forward Voltage at TJ = +125°C VF 0.8 V IF = 1A, TJ = +125°C 2

CAD (KiCad official)

  • Symbol: US1DWF-7
  • Footprint: Diode_SMD:D_SOD-123F
  • 3D model: SOD-123F (KiCad packages3D, STEP)
  • 3D model files: us1dwf-7-etched.step / us1dwf-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); us1dwf-7.step / us1dwf-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 173c0b19780364ae, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF