component
US1A
Public Made by Adomby adom
hongjiacheng Fast Recovery/High Efficiency Diode, SMA(DO-214AC). Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
main
US1A
hongjiacheng · Fast Recovery/High Efficiency Diode · SMA(DO-214AC)
US1A from hongjiacheng, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 50 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 35 | V | 1 | |||
| Maximum DC blocking Voltage | VDC | 50 | V | 1 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | 60Hz sinewave, Resistance load, TL (Fig.1) | 1 | ||
| Non-repetitive Peak Forward Surge Current | IFSM | 30 | A | t=8.3ms Half-sine wave | 1 | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Typical Thermal Resistance junction to ambient | RθJ-A | 80 | ℃/W | 1 | |||
| Typical Thermal Resistance junction to lead | RθJ-L | 30 | ℃/W | 1 | |||
| Maximum instantaneous forward voltage | VF | 1 | V | IF=1.0A | 2 | ||
| Maximum reverse recovery time | Trr | 50 | ns | IF=0.5A, IR=1.0A, Irr=0.25A | 2 | ||
| Maximum DC reverse current at rated DC blocking voltage, TA=25℃ | IR1 | 5 | μA | VR=VDC, TA=25℃ | 2 | ||
| Maximum DC reverse current at rated DC blocking voltage, TA=100℃ | IR2 | 500 | μA | VR=VDC, TA=100℃ | 2 | ||
| Typical junction capacitance | CJ | 20 | pF | 4.0V DC, 1MHz | 2 |
CAD (KiCad official)
- Symbol:
US1A - Footprint:
Diode_SMD:D_SMA - 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files:
us1a-etched.step/us1a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);us1a.step/us1a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (3 pp, sha256
da9413d932b56832, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# US1A
**hongjiacheng** · Fast Recovery/High Efficiency Diode · SMA(DO-214AC)
US1A from hongjiacheng, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | | | 50 | V | | 1 |
| Maximum RMS Voltage | VRMS | | | 35 | V | | 1 |
| Maximum DC blocking Voltage | VDC | | | 50 | V | | 1 |
| Maximum Average Forward Rectified Current | IF(AV) | | | 1 | A | 60Hz sinewave, Resistance load, TL (Fig.1) | 1 |
| Non-repetitive Peak Forward Surge Current | IFSM | | | 30 | A | t=8.3ms Half-sine wave | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Junction temperature | Tj | -55 | | 150 | ℃ | | 1 |
| Typical Thermal Resistance junction to ambient | RθJ-A | | 80 | | ℃/W | | 1 |
| Typical Thermal Resistance junction to lead | RθJ-L | | 30 | | ℃/W | | 1 |
| Maximum instantaneous forward voltage | VF | | | 1 | V | IF=1.0A | 2 |
| Maximum reverse recovery time | Trr | | | 50 | ns | IF=0.5A, IR=1.0A, Irr=0.25A | 2 |
| Maximum DC reverse current at rated DC blocking voltage, TA=25℃ | IR1 | | | 5 | μA | VR=VDC, TA=25℃ | 2 |
| Maximum DC reverse current at rated DC blocking voltage, TA=100℃ | IR2 | | | 500 | μA | VR=VDC, TA=100℃ | 2 |
| Typical junction capacitance | CJ | | 20 | | pF | 4.0V DC, 1MHz | 2 |
## CAD (KiCad official)
- Symbol: `US1A`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files: `us1a-etched.step` / `us1a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `us1a.step` / `us1a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [hongjiacheng datasheet](docs/us1a-datasheet.pdf) (3 pp, sha256 `da9413d932b56832`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/us1a-datasheet.pdf)