component
US1A-13-F
Public Made by Adomby adom
Diodes Incorporated Fast Recovery / High Efficiency Diodes, SMA. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
main
US1A-13-F
Diodes Incorporated · Fast Recovery / High Efficiency Diodes · SMA
US1A-13-F from Diodes Incorporated, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage (US1A column) | VRRM, VRWM, VR | 50 | V | 2 | |||
| RMS Reverse Voltage (US1A column) | VR(RMS) | 35 | V | 2 | |||
| Average Rectified Output Current | IO | 1 | A | @ TT = +75°C | 2 | ||
| Non-Repetitive Peak Forward Surge Current | IFSM | 30 | A | 8.3ms single half sine-wave superimposed on rated load | 2 | ||
| Maximum Thermal Resistance, Junction to Terminal | RθJT | 30 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -65 | 150 | °C | 2 | ||
| Forward Voltage Drop (US1A column) | VFM | 1 | V | @ IF = 1.0A | 2 | ||
| Peak Reverse Current at rated DC blocking voltage, @ TA = +25°C | IRM | 5 | µA | @ TA = +25°C, at rated DC blocking voltage (Note 4) | 2 | ||
| Peak Reverse Current at rated DC blocking voltage, @ TA = +100°C | IRM | 100 | µA | @ TA = +100°C, at rated DC blocking voltage (Note 4) | 2 | ||
| Reverse Recovery Time (US1A column) | trr | 50 | ns | Note 5: IF = 0.5A, IR = 1.0A, Irr = 0.25A | 2 | ||
| Typical Total Capacitance (US1A column) | CT | 20 | pF | Measured at 1.0MHz and applied reverse voltage of 4.0V DC (Note 6) | 2 |
CAD (KiCad official)
- Symbol:
US1A-13-F - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
us1a-13-f-etched.step/us1a-13-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);us1a-13-f.step/us1a-13-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (5 pp, sha256
d50b2773c0300d97, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# US1A-13-F
**Diodes Incorporated** · Fast Recovery / High Efficiency Diodes · SMA
US1A-13-F from Diodes Incorporated, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage (US1A column) | VRRM, VRWM, VR | | | 50 | V | | 2 |
| RMS Reverse Voltage (US1A column) | VR(RMS) | | | 35 | V | | 2 |
| Average Rectified Output Current | IO | | | 1 | A | @ TT = +75°C | 2 |
| Non-Repetitive Peak Forward Surge Current | IFSM | | | 30 | A | 8.3ms single half sine-wave superimposed on rated load | 2 |
| Maximum Thermal Resistance, Junction to Terminal | RθJT | | | 30 | °C/W | | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -65 | | 150 | °C | | 2 |
| Forward Voltage Drop (US1A column) | VFM | | | 1 | V | @ IF = 1.0A | 2 |
| Peak Reverse Current at rated DC blocking voltage, @ TA = +25°C | IRM | | | 5 | µA | @ TA = +25°C, at rated DC blocking voltage (Note 4) | 2 |
| Peak Reverse Current at rated DC blocking voltage, @ TA = +100°C | IRM | | | 100 | µA | @ TA = +100°C, at rated DC blocking voltage (Note 4) | 2 |
| Reverse Recovery Time (US1A column) | trr | | | 50 | ns | Note 5: IF = 0.5A, IR = 1.0A, Irr = 0.25A | 2 |
| Typical Total Capacitance (US1A column) | CT | | 20 | | pF | Measured at 1.0MHz and applied reverse voltage of 4.0V DC (Note 6) | 2 |
## CAD (KiCad official)
- Symbol: `US1A-13-F`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA (KiCad packages3D, STEP)
- 3D model files: `us1a-13-f-etched.step` / `us1a-13-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `us1a-13-f.step` / `us1a-13-f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588880028717764608) (5 pp, sha256 `d50b2773c0300d97`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/us1a-13-f-datasheet.pdf)