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UPA2726UT1A-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownUPA2726UT1A-VB
VBsemi Elec · MOSFETs · DFN5x6-8
UPA2726UT1A-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pin 1 is marked with a dot, and VDS is rated at -30 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the other source pins; continuous source-drain diode current is -80 A at TC = 25 °C (package limited). |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the other source pins; gate-source voltage is rated at ±20 V. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS is rated at ±20 V, with a threshold of -1.0 V min to -3.0 V max at ID = -250 µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; continuous drain current is -120 A at TC = 25 °C (package limited) and pulsed drain current is -280 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; RDS(on) is 0.004 Ω at VGS = -10 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; RDS(on) is 0.006 Ω at VGS = -4.5 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; drain-source voltage is rated at -30 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | -120 | A | TC = 25 °C, TJ = 150 °C, package limited | 1 | ||
| Continuous Drain Current | ID | -100 | A | TC = 70 °C, TJ = 150 °C, package limited | 1 | ||
| Continuous Drain Current | ID | -31.6 | A | TA = 25 °C, b, c | 1 | ||
| Continuous Drain Current | ID | -25.3 | A | TA = 70 °C, b, c | 1 | ||
| Pulsed Drain Current | IDM | -280 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -80 | A | TC = 25 °C, package limited | 1 | ||
| Continuous Source-Drain Diode Current | IS | -56 | A | TA = 25 °C, b, c | 1 | ||
| Single Pulse Avalanche Current | IAS | -60 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 160 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 83 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 6.95 | W | TA = 25 °C, b, c | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TA = 70 °C, b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Peak Temperature | 260 | °C | d, e | 1 | |||
| Junction-to-Ambient Thermal Resistance | RthJA | 15 | 20 | °C/W | t ≤ 10 s, b, f | 1 | |
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.9 | 1.2 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.006 | Ω | VGS = -4.5 V, ID = -15 A | 2 | ||
| Body Diode Voltage | VSD | -0.54 | -1.1 | V | IS = -5 A | 2 | |
| Continuous Source-Drain Diode Current | IS | 100 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 120 | A | 2 | |||
| Turn-On Delay Time | td(on) | 25 | 40 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 15 | 30 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 110 | 170 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 30 | 50 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 110 | 170 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 100 | 150 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 100 | 150 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 50 | 75 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Body Diode Reverse Recovery Time | trr | 50 | 100 | ns | IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 65 | 130 | nC | IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | -31 | mV/°C | ID = -250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | 6.5 | mV/°C | ID = -250 µA | 2 | ||
| Forward Transconductance | gfs | 97 | S | VDS = -15 V, ID = -20 A | 2 | ||
| Gate Resistance | Rg | 1.9 | Ω | f = 1 MHz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | d. The DFN5x6 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cann | 1 |
CAD (KiCad official)
- Symbol:
UPA2726UT1A-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
upa2726ut1a-vb-etched.step/upa2726ut1a-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);upa2726ut1a-vb.step/upa2726ut1a-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
6fb66ed33cd98b04, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).