component

UMZ2NTR

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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UMZ2NTR

ROHM Semicon · Bipolar (BJT) · SOT-363

UMZ2NTR from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Tr1 (PNP) emitter; Tr1 is rated VCEO -50V and IC -150mA.
2 B1 input Tr1 (PNP) base; Tr1 has VEBO of -6V.
3 B2 input Tr2 (NPN) base; Tr2 has VEBO of 7V.
4 C2 passive Tr2 (NPN) collector; Tr2 is rated VCEO 50V and IC 150mA.
5 E2 passive Tr2 (NPN) emitter.
6 C1 passive Tr1 (PNP) collector; Tr1 is rated VCEO -50V and IC -150mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (Tr1 PNP) VCBO -60 V 2
Collector-base voltage (Tr2 NPN) VCBO 60 V 2
Collector-emitter voltage (Tr1 PNP) VCEO -50 V 2
Collector-emitter voltage (Tr2 NPN) VCEO 50 V 2
Emitter-base voltage (Tr1 PNP) VEBO -6 V 2
Emitter-base voltage (Tr2 NPN) VEBO 7 V 2
Collector current (Tr1 PNP) IC -150 mA 2
Collector current (Tr2 NPN) IC 150 mA 2
Power dissipation (EMZ2/UMZ2N, total) PD 150 mW/Total Each terminal mounted on reference land; 120 mW per element must not be exceeded 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2
Collector-base breakdown voltage (Tr1 PNP) BVCBO -60 V IC = -50μA 2
Collector-emitter breakdown voltage (Tr1 PNP) BVCEO -50 V IC = -1mA 2
Emitter-base breakdown voltage (Tr1 PNP) BVEBO -6 V IE = -50μA 2
Collector cut-off current (Tr1 PNP) ICBO -100 nA VCB = -60V 2
Emitter cut-off current (Tr1 PNP) IEBO -100 nA VEB = -6V 2
Collector-emitter saturation voltage (Tr1 PNP) VCE(sat) -500 mV IC = -50mA, IB = -5mA 2
DC current gain (Tr1 PNP) hFE 120 560 - VCE = -6V, IC = -1mA 2
Output capacitance (Tr1 PNP) Cob 4 5 pF VCB = -12V, IE = 0A, f = 1MHz 2
Collector-base breakdown voltage (Tr2 NPN) BVCBO 60 V IC = 50μA 2
Collector-emitter breakdown voltage (Tr2 NPN) BVCEO 50 V IC = 1mA 2
Emitter-base breakdown voltage (Tr2 NPN) BVEBO 7 V IE = 50μA 2
Collector cut-off current (Tr2 NPN) ICBO 100 nA VCB = 60V 2
Emitter cut-off current (Tr2 NPN) IEBO 100 nA VEB = 7V 2
Collector-emitter saturation voltage (Tr2 NPN) VCE(sat) 400 mV IC = 50mA, IB = 5mA 2
DC current gain (Tr2 NPN) hFE 120 560 - VCE = 6V, IC = 1mA 2
Output capacitance (Tr2 NPN) Cob 2 3.5 pF VCB = 12V, IE = 0A, f = 1MHz 2

CAD (KiCad official)

  • Symbol: UMZ2NTR
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: umz2ntr-etched.step / umz2ntr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umz2ntr.step / umz2ntr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 6bea07a83d86a728, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF