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UMZ2N

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-363. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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UMZ2N

Changjing · Bipolar (BJT) · SOT-363

UMZ2N from Changjing, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E (NPN Tr2) passive Emitter of the NPN transistor (2SC2412K chip, Tr2), rated VEBO 7 V and IC 150 mA.
2 B (NPN Tr2) input Base of the NPN transistor (2SC2412K chip, Tr2), with VEBO max 7 V.
3 C (PNP Tr1) passive Collector of the PNP transistor (2SA1037AK chip, Tr1), rated VCEO -50 V and IC -150 mA.
4 B (PNP Tr1) input Base of the PNP transistor (2SA1037AK chip, Tr1), with VEBO max -6 V.
5 E (PNP Tr1) passive Emitter of the PNP transistor (2SA1037AK chip, Tr1), rated VEBO -6 V.
6 C (NPN Tr2) passive Collector of the NPN transistor (2SC2412K chip, Tr2), rated VCEO 50 V and IC 150 mA.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage Tr1 (PNP) VCBO -60 V 1
Collector-base voltage Tr2 (NPN) VCBO 60 V 1
Collector-emitter voltage Tr1 (PNP) VCEO -50 V 1
Collector-emitter voltage Tr2 (NPN) VCEO 50 V 1
Emitter-base voltage Tr1 (PNP) VEBO -6 V 1
Emitter-base voltage Tr2 (NPN) VEBO 7 V 1
Collector current Tr1 (PNP) IC -150 mA 1
Collector current Tr2 (NPN) IC 150 mA 1
Collector power dissipation (package value) PC 150 mW 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Collector-base breakdown voltage Tr1 (PNP) V(BR)CBO -60 V IC=-50μA, IE=0 1
Collector-emitter breakdown voltage Tr1 (PNP) V(BR)CEO -50 V IC=-1mA, IB=0 1
Emitter-base breakdown voltage Tr1 (PNP) V(BR)EBO -6 V IE=-50μA, IC=0 1
Collector cut-off current Tr1 (PNP) ICBO -0.1 μA VCB=-60V, IE=0 1
Emitter cut-off current Tr1 (PNP) IEBO -0.1 μA VEB=-6V, IC=0 1
DC current gain Tr1 (PNP) hFE 120 560 VCE=-6V, IC=-1mA 1
Collector-emitter saturation voltage Tr1 (PNP) VCE(sat) -0.5 V IC=-50mA, IB=-5mA 1
Transition frequency Tr1 (PNP) fT 140 MHz VCE=-12V, IE=2mA, f=100MHz 1
Collector output capacitance Tr1 (PNP) Cob 5 pF VCB=-12V, IE=0, f=1MHz 1
Collector-base breakdown voltage Tr2 (NPN) V(BR)CBO 60 V IC=50μA, IE=0 2
Collector-emitter breakdown voltage Tr2 (NPN) V(BR)CEO 50 V IC=1mA, IB=0 2
Emitter-base breakdown voltage Tr2 (NPN) V(BR)EBO 7 V IE=50μA, IC=0 2
Collector cut-off current Tr2 (NPN) ICBO 0.1 μA VCB=60V, IE=0 2
Emitter cut-off current Tr2 (NPN) IEBO 0.1 μA VEB=7V, IC=0 2
DC current gain Tr2 (NPN) hFE 120 560 VCE=6V, IC=1mA 2
Collector-emitter saturation voltage Tr2 (NPN) VCE(sat) 0.4 V IC=50mA, IB=5mA 2
Transition frequency Tr2 (NPN) fT 180 MHz VCE=12V, IE=-2mA, f=100MHz 2
Collector output capacitance Tr2 (NPN) Cob 3.5 pF VCB=12V, IE=0, f=1MHz 2

CAD (KiCad official)

  • Symbol: UMZ2N
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: umz2n-etched.step / umz2n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umz2n.step / umz2n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 d2bec64fe60f92ee, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF