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UMZ1NFHATR-HXY

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HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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UMZ1NFHATR-HXY

HXY MOSFET · Bipolar (BJT) · SOT-363

UMZ1NFHATR-HXY from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN, 2SK2412K-type); VEBO 7 V max, IC 150 mA max.
2 B1 passive Base of transistor 1 (NPN); transistor elements are independent of each other.
3 C2 passive Collector of transistor 2 (PNP, 2SA1037AK-type); VCBO -60 V, VCEO -60 V max, IC -150 mA max.
4 E2 passive Emitter of transistor 2 (PNP); VEBO -7 V max.
5 B2 passive Base of transistor 2 (PNP); transistor elements are independent of each other.
6 C1 passive Collector of transistor 1 (NPN); VCBO 60 V, VCEO 50 V max, IC 150 mA max.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN Collector-base breakdown voltage V(BR)CBO 60 V IC=50μA,IE=0 1
NPN Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA,IB=0 1
NPN Emitter-base breakdown voltage V(BR)EBO 7 V IE=50μA,IC=0 1
NPN Collector cut-off current ICBO 0.1 μA VCB=60V,IE=0 1
NPN Emitter cut-off current IEBO 0.1 μA VEB=7V,IC=0 1
NPN DC current gain hFE 120 560 VCE=6V,IC=1mA 1
NPN Collector-emitter saturation voltage VCE(sat) 0.4 V IC=50mA,IB=5mA 1
NPN Transition frequency fT 180 MHz VCE=12V,IC=2mA,f=100MHz 1
NPN Collector output capacitance Cob 2 3.5 pF VCB=12V,IE=0,f=1MHz 1
PNP Collector-base breakdown voltage V(BR)CBO -60 V IC=-50μA,IE=0 2
PNP Collector-emitter breakdown voltage V(BR)CEO -50 V IC=-1mA,IB=0 2
PNP Emitter-base breakdown voltage V(BR)EBO -6 V IE=-50μA,IC=0 2
PNP Collector cut-off current ICBO -0.1 μA VCB=-60V,IE=0 2
PNP Emitter cut-off current IEBO -0.1 μA VEB=-6V,IC=0 2
PNP DC current gain hFE 120 560 VCE=-6V,IC=-1mA 2
PNP Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-50mA,IB=-5mA 2
PNP Transition frequency fT 140 MHz VCE=-12V,IC=-2mA,f=100MHz 2
PNP Collector output capacitance Cob 5 pF VCB=-12V,IE=0,f=1MHz 2
NPN Collector-base voltage VCBO 60 V Ta=25°C 1
NPN Collector-emitter voltage VCEO 50 V Ta=25°C 1
NPN Emitter-base voltage VEBO 7 V Ta=25°C 1
NPN Collector current IC 150 mA Ta=25°C 1
NPN Collector power dissipation PC 150 mW Ta=25°C 1
Thermal resistance, junction to ambient RθJA 625 ℃/W 1
Operating junction and storage temperature range TJ,Tstg -55 150 ℃ 1
PNP Collector-base voltage VCBO -60 V Ta=25°C 2
PNP Collector-emitter voltage VCEO -60 V Ta=25°C 2
PNP Emitter-base voltage VEBO -7 V Ta=25°C 2
PNP Collector current IC -150 mA Ta=25°C 2
PNP Collector power dissipation PC 150 mW Ta=25°C 2
Thermal resistance, junction to ambient (PNP section) RθJA 625 ℃/W 2
PNP Operating junction and storage temperature range TJ,Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: UMZ1NFHATR-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: umz1nfhatr-hxy-etched.step / umz1nfhatr-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umz1nfhatr-hxy.step / umz1nfhatr-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 17dca8af415f5c76, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF