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UMZ1N

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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UMZ1N

Changjing · Bipolar (BJT) · SOT-363

UMZ1N from Changjing, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of TR1 (NPN, 2SC2412K), with VEBO rated 7 V and IC rated 0.15 A continuous.
2 B1 passive Base of TR1 (NPN), with VCBO rated 60 V and VEBO rated 7 V.
3 C2 passive Collector of TR2 (PNP, 2SA1037AK), with VCBO of -60 V, VCEO of -50 V and IC of -0.15 A continuous.
4 E2 passive Emitter of TR2 (PNP), with VEBO rated -6 V.
5 B2 passive Base of TR2 (PNP), with VCBO rated -60 V and VEBO rated -6 V.
6 C1 passive Collector of TR1 (NPN), with VCBO of 60 V, VCEO of 50 V and IC of 0.15 A continuous.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
TR1 NPN Collector-emitter saturation voltage VCE(sat) 0.4 V IC=50mA,IB=5mA 2
TR1 NPN Collector cut-off current ICBO 0.1 μA VCB=60V,IE=0 2
TR1 NPN Emitter cut-off current IEBO 0.1 μA VEB=7V,IC=0 2
TR1 NPN Collector-base breakdown voltage V(BR)CBO 60 V IC=50μA,IE=0 2
TR1 NPN Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA,IB=0 2
TR1 NPN Emitter-base breakdown voltage V(BR)EBO 7 V IE=50μA,IC=0 2
TR1 NPN DC current gain hFE 120 560 VCE=6V,IC=1mA 2
TR1 NPN Transition frequency fT 180 MHz VCE=12V,IC=2mA,f=100MHz 2
TR1 NPN Collector output capacitance Cob 2 3.5 pF VCB=12V,IE=0,f=1MHz 2
TR1 PNP Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-50mA,IB=-5mA 2
TR1 PNP Collector cut-off current ICBO -0.1 μA VCB=-60V,IE=0 2
TR1 PNP Emitter cut-off current IEBO -0.1 μA VEB=-6V,IC=0 2
TR1 PNP Collector-base breakdown voltage V(BR)CBO -60 V IC=-50μA,IE=0 2
TR1 PNP Collector-emitter breakdown voltage V(BR)CEO -50 V IC=-1mA,IB=0 2
TR1 PNP Emitter-base breakdown voltage V(BR)EBO -6 V IE=-50μA,IC=0 2
TR1 PNP DC current gain hFE 120 560 VCE=-6V,IC=-1mA 2
TR1 PNP Transition frequency fT 140 MHz VCE=-12V,IC=-2mA,f=100MHz 2
TR1 PNP Collector output capacitance Cob 5 pF VCB=-12V,IE=0,f=1MHz 2
TR1 NPN Collector-Base Voltage (absolute maximum) VCBO 60 V 1
TR1 NPN Collector-Emitter Voltage (absolute maximum) VCEO 50 V 1
TR1 NPN Emitter-Base Voltage (absolute maximum) VEBO 7 V 1
TR1 NPN Collector Current -Continuous (absolute maximum) IC 0.15 A 1
TR1 NPN Collector Power Dissipation (absolute maximum) PC 0.15 W 1
TR2 PNP Collector-Base Voltage (absolute maximum) VCBO -60 V 1
TR2 PNP Collector-Emitter Voltage (absolute maximum) VCEO -50 V 1
TR2 PNP Emitter-Base Voltage (absolute maximum) VEBO -6 V 1
TR2 PNP Collector Current -Continuous (absolute maximum) IC -0.15 A 1
TR2 PNP Collector Power Dissipation (absolute maximum) PC 0.15 W 1
Operation Junction and Storage Temperature Range (TJ,Tstg) TJ,Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: UMZ1N
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: umz1n-etched.step / umz1n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umz1n.step / umz1n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 25d4b79ead248422, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF