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Contents

README

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UMY1NTR

ROHM Semicon · Bipolar (BJT) · SOT-353-5

UMY1NTR from ROHM Semicon, in a SOT-353-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B1 input Tr1 (PNP, 2SA1037AK) base; Tr1 is rated VCEO -50V, IC -150mA.
2 E passive Common emitter of Tr1 (PNP) and Tr2 (NPN), shared between both transistors.
3 B2 input Tr2 (NPN, 2SC2412K) base; Tr2 is rated VCEO 50V, IC 150mA.
4 C2 passive Tr2 (NPN) collector; VCEO 50V, IC 150mA, VCBO 60V.
5 C1 passive Tr1 (PNP) collector; VCEO -50V, IC -150mA, VCBO -60V.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-353-5
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage (Tr1 PNP) BVCBO -60 V IC = -50μA 2
Collector-emitter breakdown voltage (Tr1 PNP) BVCEO -50 V IC = -1mA 2
Emitter-base breakdown voltage (Tr1 PNP) BVEBO -6 V IE = -50μA 2
Collector cut-off current (Tr1 PNP) ICBO -100 nA VCB = -60V 2
Emitter cut-off current (Tr1 PNP) IEBO -100 nA VEB = -6V 2
Collector-emitter saturation voltage (Tr1 PNP) VCE(sat) -500 mV IC = -50mA, IB = -5mA 2
DC current gain (Tr1 PNP) hFE 120 560 - VCE = -6V, IC = -1mA 2
Output capacitance (Tr1 PNP) Cob 4 5 pF VCB = -12V, IE = 0mA, f = 1MHz 2
Collector-base breakdown voltage (Tr2 NPN) BVCBO 60 V IC = 50μA 2
Collector-emitter breakdown voltage (Tr2 NPN) BVCEO 50 V IC = 1mA 2
Emitter-base breakdown voltage (Tr2 NPN) BVEBO 7 V IE = 50μA 2
Collector cut-off current (Tr2 NPN) ICBO 100 nA VCB = 60V 2
Emitter cut-off current (Tr2 NPN) IEBO 100 nA VEB = 7V 2
Collector-emitter saturation voltage (Tr2 NPN) VCE(sat) 400 V IC = 50mA, IB = 5mA 2
DC current gain (Tr2 NPN) hFE 120 560 - VCE = 6V, IC = 1mA 2
Output capacitance (Tr2 NPN) Cob 2 3.5 pF VCB = 12V, IE = 0A, f = 1MHz 2
Collector-base voltage (Tr1 PNP) VCBO -60 V Ta = 25°C 2
Collector-base voltage (Tr2 NPN) VCBO 60 V Ta = 25°C 2
Collector-emitter voltage (Tr1 PNP) VCEO -50 V Ta = 25°C 2
Collector-emitter voltage (Tr2 NPN) VCEO 50 V Ta = 25°C 2
Emitter-base voltage (Tr1 PNP) VEBO -6 V Ta = 25°C 2
Emitter-base voltage (Tr2 NPN) VEBO 7 V Ta = 25°C 2
Collector current (Tr1 PNP) IC -150 mA Ta = 25°C 2
Collector current (Tr2 NPN) IC 150 mA Ta = 25°C 2
Power dissipation (EMY1/UMY1N) PD 150 mW/Total Each terminal mounted on reference land (*1); 120mW per element must not be exceeded (*2) 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: UMY1NTR
  • Footprint: Package_TO_SOT_SMD:SOT-353_SC-70-5
  • 3D model: SOT-353-5 (KiCad packages3D, STEP)
  • 3D model files: umy1ntr-etched.step / umy1ntr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umy1ntr.step / umy1ntr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 290799a524971c36, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF