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UMX2N

Changjing · Bipolar Transistors - BJT · SOT-363

UMX2N from Changjing, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the first NPN transistor (Tr1); the datasheet gives VEBO of 7 V maximum and IC of 150 mA maximum per transistor.
2 B1 passive Base of the first NPN transistor (Tr1); the datasheet gives VEBO of 7 V maximum with the emitter.
3 C2 passive Collector of the second NPN transistor (Tr2); the datasheet gives VCEO of 50 V, VCBO of 60 V and IC of 150 mA maximum.
4 E2 passive Emitter of the second NPN transistor (Tr2); the datasheet gives VEBO of 7 V maximum and IC of 150 mA maximum.
5 B2 passive Base of the second NPN transistor (Tr2); the datasheet gives VEBO of 7 V maximum with the emitter.
6 C1 passive Collector of the first NPN transistor (Tr1); the datasheet gives VCEO of 50 V, VCBO of 60 V and IC of 150 mA maximum.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

CAD (KiCad official)

  • Symbol: UMX2N
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: umx2n-etched.step / umx2n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umx2n.step / umx2n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (3 pp, sha256 c75531ff0f7a0b3a, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF