component

UMX1NTN

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 24d ago
viewers umx1ntn: viewers · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json Set visibility: public · Ray 24d ago
README.md Publish 0.1.0 · Ray 24d ago
umx1ntn-etched.glb Publish 0.1.0 · Ray 24d ago
umx1ntn-etched.step umx1ntn: factory component page (tier=lcsc) · Ray 24d ago
umx1ntn-hero.glb umx1ntn: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
umx1ntn-hero.overlay.json Publish 0.1.0 · Ray 24d ago
umx1ntn.glb Publish 0.1.0 · Ray 24d ago
umx1ntn.kicad_mod Publish 0.1.0 · Ray 24d ago
umx1ntn.kicad_sym Publish 0.1.0 · Ray 24d ago
umx1ntn.lbr Publish 0.1.0 · Ray 24d ago
umx1ntn.step Publish 0.1.0 · Ray 24d ago

UMX1NTN

ROHM Semicon · Bipolar (BJT) · SOT-363

UMX1NTN from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Tr1 emitter; 2SC2412K NPN, VEBO 7V max, IC 150mA max per transistor.
2 B1 input Tr1 base; VEBO 7V max, hFE 120 to 560 at VCE=6V, IC=1mA.
3 C2 passive Tr2 collector; VCEO 50V, VCBO 60V, IC 150mA max.
4 E2 passive Tr2 emitter; VEBO 7V max, IC 150mA max.
5 B2 input Tr2 base; VEBO 7V max, hFE 120 to 560 at VCE=6V, IC=1mA.
6 C1 passive Tr1 collector; VCEO 50V, VCBO 60V, IC 150mA max.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 60 V IC = 50μA 2
Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 7 V IE = 50μA 2
Collector cut-off current ICBO 100 nA VCB = 60V 2
Emitter cut-off current IEBO 100 nA VEB = 7V 2
Collector-emitter saturation voltage VCE(sat) 400 mV IC = 50mA, IB = 5mA 2
DC current gain hFE 120 560 - VCE = 6V, IC = 1mA 2
Output capacitance Cob 2 3.5 pF VCB = 12V, IE = 0A, f = 1MHz 2
Collector-base voltage VCBO 60 V 2
Collector-emitter voltage VCEO 50 V 2
Emitter-base voltage VEBO 7 V 2
Collector current IC 150 mA 2
Power dissipation (EMX1/UMX1N) PD 150 mW/Total Each terminal mounted on a reference land; 120mW per element must not be exceeded 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: UMX1NTN
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: umx1ntn-etched.step / umx1ntn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umx1ntn.step / umx1ntn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (10 pp, sha256 db8d706068244b87, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF