component
UMX1N-TP
Public Made by Adomby adom
MCC(Micro Commercial Components) Bipolar Transistors - BJT, SOT-363-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownUMX1N-TP
MCC(Micro Commercial Components) · Bipolar Transistors - BJT · SOT-363-6
UMX1N-TP from MCC(Micro Commercial Components), in a SOT-363-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (arrow pointing out, NPN); VEBO max 7 V. |
| 2 | B1 | passive | Base of transistor 1; hFE 120 to 560 at VCE=6V, IC=1mA. |
| 3 | C2 | passive | Collector of transistor 2; VCEO max 50 V and IC max 150 mA. |
| 4 | E2 | passive | Emitter of transistor 2 (arrow pointing out, NPN); VEBO max 7 V. |
| 5 | B2 | passive | Base of transistor 2; hFE 120 to 560 at VCE=6V, IC=1mA. |
| 6 | C1 | passive | Collector of transistor 1; VCEO max 50 V and IC max 150 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC(Micro Commercial Components) |
| Package | SOT-363-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | V | IC=50µA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 7 | V | IE=50µA, IC=0 | 2 | ||
| DC Current Gain | hFE | 120 | 560 | VCE=6V, IC=1mA | 2 | ||
| Collector Cutoff Current | ICBO | 0.1 | µA | VCB=60V, IE=0 | 2 | ||
| Emitter Cutoff Current | IEBO | 0.1 | µA | VEB=7V, IC=0 | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 | V | IC=50mA, IB=5mA | 2 | ||
| Output Capacitance | Cob | 2 | 3.5 | pF | VCB=12V, IE=0, f=1MHz | 2 | |
| Transition Frequency | fT | 180 | MHz | VCE=12V, IC=-2mA, f=100MHz | 2 | ||
| Collector-Base Voltage | VCBO | 60 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 7 | V | 1 | |||
| Continuous Collector Current | IC | 150 | mA | 1 | |||
| Power Dissipation | PD | 150 | mW | 1 | |||
| Operating Junction Temperature Range | -55 | 150 | ℃ | 1 | |||
| Storage Temperature Range | -55 | 150 | ℃ | 1 | |||
| Thermal Resistance Junction to Ambient | 833 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
UMX1N-TP - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363-6 (KiCad packages3D, STEP)
- 3D model files:
umx1n-tp-etched.step/umx1n-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);umx1n-tp.step/umx1n-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC(Micro Commercial Components) datasheet (4 pp, sha256
ef5f29964d1f5a2f, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).