component
UMW SS510B
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UMW Schottky Diodes, SMB. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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UMW SS510B
UMW · Schottky Diodes · SMB
UMW SS510B from UMW, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 70 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 100 | V | 1 | |||
| Maximum Average Forward Rectified Current | I(AV) | 5 | A | At TL (See Fig.1) | 1 | ||
| Peak Forward Surge Current | IFSM | 150 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC method) | 1 | ||
| Maximum Instantaneous Forward Voltage | VF | 0.85 | V | At 3A | 1 | ||
| Maximum DC Reverse Current | IR | 0.2 | mA | At rated DC blocking voltage, TA=25°C | 1 | ||
| Maximum DC Reverse Current | IR | 2 | mA | At rated DC blocking voltage, TA=100°C | 1 | ||
| Operating Junction Temperature Range | TJ | -50 | 125 | °C | 1 | ||
| Storage Temperature Range | TSTG | -50 | 150 | °C | 1 | ||
| Typical Thermal Resistance | RθJA | 55 | °C/W | P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas | 1 |
CAD (KiCad official)
- Symbol:
UMW SS510B - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
umw-ss510b-etched.step/umw-ss510b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);umw-ss510b.step/umw-ss510b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (5 pp, sha256
f98f579d4cd5a606, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# UMW SS510B
**UMW** · Schottky Diodes · SMB
UMW SS510B from UMW, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SMB |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | | | 100 | V | | 1 |
| Maximum RMS Voltage | VRMS | | | 70 | V | | 1 |
| Maximum DC Blocking Voltage | VDC | | | 100 | V | | 1 |
| Maximum Average Forward Rectified Current | I(AV) | | | 5 | A | At TL (See Fig.1) | 1 |
| Peak Forward Surge Current | IFSM | | | 150 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC method) | 1 |
| Maximum Instantaneous Forward Voltage | VF | | | 0.85 | V | At 3A | 1 |
| Maximum DC Reverse Current | IR | | | 0.2 | mA | At rated DC blocking voltage, TA=25°C | 1 |
| Maximum DC Reverse Current | IR | | | 2 | mA | At rated DC blocking voltage, TA=100°C | 1 |
| Operating Junction Temperature Range | TJ | -50 | | 125 | °C | | 1 |
| Storage Temperature Range | TSTG | -50 | | 150 | °C | | 1 |
| Typical Thermal Resistance | RθJA | | 55 | | °C/W | P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas | 1 |
## CAD (KiCad official)
- Symbol: `UMW SS510B`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `umw-ss510b-etched.step` / `umw-ss510b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `umw-ss510b.step` / `umw-ss510b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755886904045129728) (5 pp, sha256 `f98f579d4cd5a606`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/umw-ss510b-datasheet.pdf)