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UMT3904T106

Public Made by Adom

by adom

ROHM Semicon Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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UMT3904T106

ROHM Semicon · Bipolar (BJT) · SOT-323

UMT3904T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter of the NPN transistor; VEBO maximum is 6 V.
2 Base passive Base of the NPN transistor; emitter-base breakdown BVEBO is at least 6 V at IE = 10 µA.
3 Collector passive Collector of the NPN transistor; VCEO is 40 V, VCBO is 60 V and IC maximum is 200 mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 60 V IC = 10μA 2
Collector-emitter breakdown voltage BVCEO 40 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 6 V IE = 10μA 2
Collector cut-off current ICES 50 nA VCE = 30V 2
Emitter cut-off current IEBO 50 nA VEB = 3V 2
Collector-emitter saturation voltage VCE(sat)1 200 mV IC = 10mA, IB = 1mA 2
Collector-emitter saturation voltage VCE(sat)2 300 mV IC = 50mA, IB = 5mA 2
Base-emitter saturation voltage VBE(sat)1 650 850 mV IC = 10mA, IB = 1mA 2
Base-emitter saturation voltage VBE(sat)2 950 mV IC = 50mA, IB = 5mA 2
DC current gain hFE1 40 - VCE = 1V, IC = 100μA 2
DC current gain hFE2 70 - VCE = 1V, IC = 1mA 2
DC current gain hFE3 100 300 - VCE = 1V, IC = 10mA 2
DC current gain hFE4 60 - VCE = 1V, IC = 50mA 2
DC current gain hFE5 30 - VCE = 1V, IC = 100mA 2
Output capacitance Cob 4 pF VCB = 10V, IE = 0A, f = 100kHz 2
Input capacitance Cib 8 pF VBE = 0.5V, IC = 0A, f = 100kHz 2
Transition frequency fT 300 MHz VCE = 20V, IE = -10mA, f = 100MHz 2
Delay time td 35 ns VCC ≈ 3V, IC = 10mA, IB1 = 1mA, RL = 300Ω, VBE(off) = -500mV, see test circuit; pulsed 2
Rise time tr 35 ns 2
Storage time tstg 200 ns VCC ≈ 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA, RL = 300Ω, see test circuit; pulsed 2
Fall time tf 50 ns 2
Collector-base voltage VCBO 60 V Ta = 25°C 1
Collector-emitter voltage VCEO 40 V Ta = 25°C 1
Emitter-base voltage VEBO 6 V Ta = 25°C 1
Collector current IC 200 mA Ta = 25°C 1
Power dissipation PD 200 mW Ta = 25°C; each terminal mounted on a reference land 1
Junction temperature Tj 150 ℃ Ta = 25°C 1
Range of storage temperature Tstg -55 150 ℃ Ta = 25°C 1

CAD (KiCad official)

  • Symbol: UMT3904T106
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: umt3904t106-etched.step / umt3904t106-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umt3904t106.step / umt3904t106.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (6 pp, sha256 d90f173f1d46d6be, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF