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UMT2907AT106

Public Made by Adom

by adom

ROHM Semicon Bipolar Transistors - BJT, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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UMT2907AT106

ROHM Semicon · Bipolar Transistors - BJT · SOT-323

UMT2907AT106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter of the PNP transistor; emitter-base voltage VEBO is limited to -5 V.
2 Base passive Base of the PNP transistor; the datasheet specifies IB of -15 mA to -50 mA in its saturation test conditions.
3 Collector passive Collector of the PNP transistor; VCEO is -60 V and continuous collector current IC is -600 mA maximum.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-323
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -60 V Ta = 25°C 1
Collector-emitter voltage VCEO -60 V Ta = 25°C 1
Emitter-base voltage VEBO -5 V Ta = 25°C 1
Collector current IC -600 mA Ta = 25°C 1
Power dissipation PD 200 mW Ta = 25°C, each terminal mounted on a reference land 1
Junction temperature Tj 150 °C Ta = 25°C 1
Storage temperature range Tstg -55 150 °C 1
Collector-base breakdown voltage BVCBO -60 V IC = -10μA 2
Collector-emitter breakdown voltage BVCEO -60 V IC = -10mA 2
Emitter-base breakdown voltage BVEBO -5 V IE = -10μA 2
Collector cut-off current ICBO -100 nA VCB = -50V 2
Emitter cut-off current IEBO -100 nA VEB = -3V 2
Collector-emitter saturation voltage 1 VCE(sat)1 -400 mV IC = -150mA, IB = -15mA 2
Collector-emitter saturation voltage 2 VCE(sat)2 -1.6 V IC = -500mA, IB = -50mA, pulsed 2
Base-emitter saturation voltage 1 VBE(sat)1 -1.3 V IC = -150mA, IB = -15mA 2
Base-emitter saturation voltage 2 VBE(sat)2 -2.6 V IC = -500mA, IB = -50mA, pulsed 2
DC current gain 1 hFE1 75 VCE = -10V, IC = -100μA 2
DC current gain 2 hFE2 100 VCE = -10V, IC = -1mA 2
DC current gain 3 hFE3 100 VCE = -10V, IC = -10mA 2
DC current gain 4 hFE4 100 300 VCE = -10V, IC = -150mA, pulsed 2
DC current gain 5 hFE5 50 VCE = -10V, IC = -500mA, pulsed 2
Output capacitance Cob 8 pF VCB = -10V, IE = 0A, f = 100kHz 2
Input capacitance Cib 30 pF VBE = -2V, IC = 0A, f = 100kHz 2
Transition frequency fT 200 MHz VCE = -20V, IE = 50mA, f = 100MHz 2
Turn-On Delay time ton 50 ns VCC ⋍ -30V, IC = -150mA, IB1 = -15mA, RL = 200Ω, VBE(off) = 500mV, pulsed 2
Delay time td 10 ns VCC ⋍ -30V, IC = -150mA, IB1 = -15mA, RL = 200Ω, VBE(off) = 500mV, pulsed 2
Rise time tr 40 ns VCC ⋍ -30V, IC = -150mA, IB1 = -15mA, RL = 200Ω, VBE(off) = 500mV, pulsed 2
Turn-Off Delay time toff 100 ns VCC ⋍ -30V, IC = -150mA, IB1 = -15mA, IB2 = 15mA, RL = 200Ω, pulsed 2
Storage time tstg 80 ns VCC ⋍ -30V, IC = -150mA, IB1 = -15mA, IB2 = 15mA, RL = 200Ω, pulsed 2
Fall time tf 30 ns VCC ⋍ -30V, IC = -150mA, IB1 = -15mA, IB2 = 15mA, RL = 200Ω, pulsed 2

CAD (KiCad official)

  • Symbol: UMT2907AT106
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: umt2907at106-etched.step / umt2907at106-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umt2907at106.step / umt2907at106.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (7 pp, sha256 eeb69c87593d75f0, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF