component
UMH3NFHATN
Public Made by Adomby adom
ROHM Semicon Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownUMH3NFHATN
ROHM Semicon · Digital Transistors · SOT-363
UMH3NFHATN from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | DTr1 emitter (the DTr1 emitter, grounded in typical use); transistor elements are independent, VEBO max 5V. |
| 2 | B1 | input | DTr1 base with built-in 4.7kΩ series resistor R1 (3.29 to 6.11kΩ); VEBO max 5V. |
| 3 | C2 | passive | DTr2 collector; VCEO 50V, IC max 100mA. |
| 4 | E2 | passive | DTr2 emitter; VEBO max 5V. |
| 5 | B2 | input | DTr2 base with built-in 4.7kΩ series resistor R1 (3.29 to 6.11kΩ); VEBO max 5V. |
| 6 | C1 | passive | DTr1 collector; VCEO 50V, IC max 100mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 50 | V | IC = 50μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 50 | V | IC = 1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE = 50μA | 2 | ||
| Collector cut-off current | ICBO | 500 | nA | VCB = 50V | 2 | ||
| Emitter cut-off current | IEBO | 500 | nA | VEB = 4V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 300 | mV | IC = 5mA, IB = 250μA | 2 | ||
| DC current gain | hFE | 100 | 250 | 600 | - | VCE = 5V, IC = 1mA | 2 |
| Input resistance | R1 | 3.29 | 4.7 | 6.11 | kΩ | 2 | |
| Collector-base voltage | VCBO | 50 | V | 2 | |||
| Collector-emitter voltage | VCEO | 50 | V | 2 | |||
| Emitter-base voltage | VEBO | 5 | V | 2 | |||
| Collector current | IC | 100 | mA | 2 | |||
| Power dissipation | PD | 150 | mW | Each terminal mounted on a reference land (notes *1, *2); 120mW per element must not be exceeded | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
UMH3NFHATN - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
umh3nfhatn-etched.step/umh3nfhatn-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);umh3nfhatn.step/umh3nfhatn.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (6 pp, sha256
1d39e73938081416, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).