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UMH3N

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Changjing Digital Transistors, SOT-363. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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UMH3N

Changjing · Digital Transistors · SOT-363

UMH3N from Changjing, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B1 input Base input of transistor 1; driven through internal 4.7 kΩ series resistor (R1, min 3.29 kΩ / max 6.11 kΩ); V(BR)EBO = 5 V max.
2 E1 passive Emitter of transistor 1; typically returned to ground; rated IC = 100 mA max, PC = 150 mW total package.
3 C1 output Collector of transistor 1 (open-collector); V(BR)CEO = 50 V, V(BR)CBO = 50 V, IC = 100 mA max, VCE(sat) = 0.3 V at IC = 5 mA.
4 C2 output Collector of transistor 2 (open-collector); V(BR)CEO = 50 V, V(BR)CBO = 50 V, IC = 100 mA max, VCE(sat) = 0.3 V at IC = 5 mA.
5 E2 passive Emitter of transistor 2; typically returned to ground; rated IC = 100 mA max, PC = 150 mW total package.
6 B2 input Base input of transistor 2; driven through internal 4.7 kΩ series resistor (R1, min 3.29 kΩ / max 6.11 kΩ); V(BR)EBO = 5 V max.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 50 V Ic=50μA 1
Collector-emitter breakdown voltage V(BR)CEO 50 V Ic=1mA 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE=50μA 1
Collector cut-off current ICBO 0.5 μA VCB=50V 1
Emitter cut-off current IEBO 0.5 μA VEB=4V 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=5mA,IB=0.25mA 1
DC current transfer ratio hFE 100 600 VCE=5V,IC=1mA 1
Input resistance R1 3.29 4.7 6.11 KΩ 1
Transition frequency fT 250 MHz VCE=10V ,IE=-5mA,f=100MHz 1
Collector-base voltage V(BR)CBO 50 V 1
Collector-emitter voltage V(BR)CEO 50 V 1
Emitter-base voltage V(BR)EBO 5 V 1
Collector current IC 100 mA 1
Collector power dissipation PC 150 mW 1
Junction temperature Tj 150 1
Storage temperature Tstg -55 150 1

CAD (KiCad official)

  • Symbol: UMH3N
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: umh3n-etched.step / umh3n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); umh3n.step / umh3n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 8e188281370e30db, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF