component
UMD6N
Public Made by Adomby adom
Changjing Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| umd6n-etched.glb | 16d ago |
| umd6n-etched.step | 16d ago |
| umd6n-hero.glb | 16d ago |
| umd6n-hero.overlay.json | 16d ago |
| umd6n.glb | 16d ago |
| umd6n.kicad_mod | 16d ago |
| umd6n.kicad_sym | 16d ago |
| umd6n.lbr | 16d ago |
| umd6n.step | 16d ago |
UMD6N
Changjing · Digital Transistors · SOT-363
UMD6N from Changjing, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN transistor (DTC143T), rated V(BR)EBO 5 V. |
| 2 | B1 | passive | Base of the NPN transistor (DTC143T) through built-in input resistor R1 (4.7 kΩ typ). |
| 3 | C2 | passive | Collector of the PNP transistor (DTA143T), rated 50 V V(BR)CEO and 100 mA IC. |
| 4 | E2 | passive | Emitter of the PNP transistor (DTA143T), rated V(BR)EBO 5 V. |
| 5 | B2 | passive | Base of the PNP transistor (DTA143T) through built-in input resistor R1 (4.7 kΩ typ). |
| 6 | C1 | passive | Collector of the NPN transistor (DTC143T), rated 50 V V(BR)CEO and 100 mA IC. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC=50μA | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC=1mA | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=50μA | 1 | ||
| Collector cut-off current | ICBO | 0.5 | μA | VCB=50V | 1 | ||
| Emitter cut-off current | IEBO | 0.5 | μA | VEB=4V | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=5mA,IB=0.25mA | 1 | ||
| DC current transfer ratio | hFE | 100 | 600 | VCE=5V,IC=1mA | 1 | ||
| Input resistance | R1 | 3.29 | 4.7 | 6.11 | KΩ | 1 | |
| Collector-base voltage | V(BR)CBO | 50 | V | 1 | |||
| Collector-emitter voltage | V(BR)CEO | 50 | V | 1 | |||
| Emitter-base voltage | V(BR)EBO | 5 | V | 1 | |||
| Collector current | IC | 100 | mA | 1 | |||
| Collector power dissipation | PC | 150 | mW | 1 | |||
| Operating junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
UMD6N - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
umd6n-etched.step/umd6n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);umd6n.step/umd6n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
b3e68487e8c2f5c6, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).