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UM6K34NTCN

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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UM6K34NTCN

ROHM Semicon · MOSFETs · SOT-363

UM6K34NTCN from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Tr1 (Nch MOSFET, VDSS 50V, ID ±200mA).
2 G1 input Gate of Tr1; VGSS maximum ±8V, 0.9V drive, VGS(th) 0.3 to 0.8V, with ESD protection diode.
3 D2 passive Drain of Tr2 (Nch MOSFET, VDSS 50V, ID ±200mA).
4 S2 passive Source of Tr2 (Nch MOSFET).
5 G2 input Gate of Tr2; VGSS maximum ±8V, 0.9V drive, VGS(th) 0.3 to 0.8V, with ESD protection diode.
6 D1 passive Drain of Tr1 (Nch MOSFET, VDSS 50V, ID ±200mA).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 50 V 1
Continuous drain current ID -200 200 mA 1
Pulsed drain current IDP -800 800 mA Pw≦10μs, Duty cycle≦1% 1
Gate - Source voltage VGSS -8 8 V 1
Power dissipation total PD 150 mW Each terminal mounted on a reference land 1
Power dissipation element PD 120 mW Each terminal mounted on a reference land 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient total RthJA 833 ℃/W Each terminal mounted on a reference land 2
Thermal resistance, junction - ambient element RthJA 1042 ℃/W 2
Drain - Source breakdown voltage V(BR)DSS 50 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 50V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VDS = 0V, VGS = ±8V 2
Gate threshold voltage VGS(th) 0.3 0.8 V VDS = 10V, ID = 1mA 2
Static drain - source on-state resistance RDS(on) 1.6 2.2 Ω VGS = 4.5V, ID = 200mA 2
Static drain - source on-state resistance RDS(on) 1.7 2.4 Ω VGS = 2.5V, ID = 200mA 2
Static drain - source on-state resistance RDS(on) 2 2.8 Ω VGS = 1.5V, ID = 200mA 2
Static drain - source on-state resistance RDS(on) 2.2 3.3 Ω VGS = 1.2V, ID = 100mA 2
Static drain - source on-state resistance RDS(on) 3 9 Ω VGS = 0.9V, ID = 10mA 2
Forward transfer admittance /Yfs/ 200 mS VDS = 10V, ID = 200mA 2
Breakdown voltage temperature coefficient ΔV(BR)DSS 53.7 mV/℃ ID = 1mA, ΔTj referenced to 25℃ 2
Gate threshold voltage temperature coefficient ΔVGS(th) -1.4 mV/℃ ID = 1mA, ΔTj referenced to 25℃ 2
Input capacitance Ciss 26 pF VGS = 0V 3
Output capacitance Coss 6 pF VDS = 10V 3
Reverse transfer capacitance Crss 3 pF f = 1MHz 3
Turn-on delay time td(on) 5 ns VDD ⋍ 25V, VGS = 4.5V 3
Rise time tr 8 ns ID = 100mA 3
Turn-off delay time td(off) 17 ns RL = 250Ω 3
Fall time tf 43 ns RG = 10Ω 3
Continuous forward current IS 125 mA Ta = 25℃ 3
Pulse forward current ISP 800 mA Pw≦10μs, Duty cycle≦1% 3
Forward voltage VSD 1.2 V VGS = 0V, IS = 200mA 3

CAD (KiCad official)

  • Symbol: UM6K34NTCN
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: um6k34ntcn-etched.step / um6k34ntcn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); um6k34ntcn.step / um6k34ntcn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 186e95641dcaab15, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF