component
UM6K33NTN
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-363. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUM6K33NTN
ROHM Semicon · MOSFETs · SOT-363
UM6K33NTN from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Tr1 Source | passive | Source of Tr1 (Nch MOSFET, VDSS 50V, ID ±200mA). |
| 2 | Tr1 Gate | input | Gate of Tr1 with ESD protection diode; gate-source voltage limited to ±8V, 1.2V drive. |
| 3 | Tr2 Drain | passive | Drain of Tr2 (Nch MOSFET, VDSS 50V, ID ±200mA). |
| 4 | Tr2 Source | passive | Source of Tr2 (Nch MOSFET, VDSS 50V, ID ±200mA). |
| 5 | Tr2 Gate | input | Gate of Tr2 with ESD protection diode; gate-source voltage limited to ±8V, 1.2V drive. |
| 6 | Tr1 Drain | passive | Drain of Tr1 (Nch MOSFET, VDSS 50V, ID ±200mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 50 | V | 1 | |||
| Continuous drain current | ID | -200 | 200 | mA | 1 | ||
| Pulsed drain current | IDP | -800 | 800 | mA | Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate - Source voltage | VGSS | -8 | 8 | V | 1 | ||
| Power dissipation, total | PD | 150 | mW | Total; *2 each terminal mounted on a reference land | 1 | ||
| Power dissipation, element | PD | 120 | mW | Element; *2 each terminal mounted on a reference land | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient, total | RthJA | 833 | ℃/W | Total; *2 each terminal mounted on a reference land | 2 | ||
| Thermal resistance, junction - ambient, element | RthJA | 1042 | ℃/W | Element; *2 each terminal mounted on a reference land | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 50 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 50V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VDS = 0V, VGS = ±8V | 2 | |
| Gate threshold voltage | VGS(th) | 0.3 | 1 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on-state resistance | RDS(on) | 1.6 | 2.2 | Ω | VGS = 4.5V, ID = 200mA; *3 pulsed | 2 | |
| Static drain - source on-state resistance | RDS(on) | 1.7 | 2.4 | Ω | VGS = 2.5V, ID = 200mA; *3 pulsed | 2 | |
| Static drain - source on-state resistance | RDS(on) | 1.9 | 2.7 | Ω | VGS = 1.8V, ID = 100mA; *3 pulsed | 2 | |
| Static drain - source on-state resistance | RDS(on) | 2 | 4 | Ω | VGS = 1.5V, ID = 40mA; *3 pulsed | 2 | |
| Static drain - source on-state resistance | RDS(on) | 2.4 | 7.2 | Ω | VGS = 1.2V, ID = 20mA; *3 pulsed | 2 | |
| Forward transfer admittance | /Yfs/ | 400 | mS | VDS = 10V, ID = 200mA; *3 pulsed | 2 | ||
| Continuous forward current (body diode) | IS | 125 | mA | Ta = 25℃ | 3 | ||
| Pulse forward current (body diode) | ISP | 800 | mA | Pw≦10μs, Duty cycle≦1% | 3 | ||
| Forward voltage (body diode) | VSD | 1.2 | V | VGS = 0V, IS = 200mA; *3 pulsed | 3 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 53.7 | mV/℃ | ID = 1mA; ΔTj referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -1.4 | mV/℃ | ID = 1mA; ΔTj referenced to 25℃ | 2 | ||
| Input capacitance | Ciss | 25 | pF | VGS = 0V | 3 | ||
| Output capacitance | Coss | 6 | pF | VDS = 10V | 3 | ||
| Reverse transfer capacitance | Crss | 3 | pF | f = 1MHz | 3 | ||
| Turn - on delay time | td(on) | 4 | ns | VDD ≒ 30V, VGS = 4.5V; *3 pulsed | 3 | ||
| Rise time | tr | 6 | ns | ID = 100mA; *3 pulsed | 3 | ||
| Turn - off delay time | td(off) | 15 | ns | RL = 300Ω; *3 pulsed | 3 | ||
| Fall time | tf | 55 | ns | RG = 10Ω; *3 pulsed | 3 |
CAD (KiCad official)
- Symbol:
UM6K33NTN - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
um6k33ntn-etched.step/um6k33ntn-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);um6k33ntn.step/um6k33ntn.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (12 pp, sha256
1e474e7e082434d0, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).