# UM6K1NTN

**ROHM Semicon** · MOSFETs · SOT-363

UM6K1NTN from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Tr1 Source | passive | Source terminal of Tr1, one of two independent N-channel MOS FET elements; the absolute maximum ratings are the same for Tr1 and Tr2 (VDSS 30 V, VGSS ±20 V, ID ±100 mA). |
| 2 | Tr1 Gate | input | Gate terminal of Tr1 with a built-in gate-source protection diode; gate-source voltage is rated ±20 V maximum. |
| 3 | Tr2 Drain | passive | Drain terminal of Tr2; drain-source voltage is rated 30 V maximum and continuous drain current ±100 mA. |
| 4 | Tr2 Source | passive | Source terminal of Tr2; pulsed drain current is rated ±400 mA (Pw ≤10 µs, duty cycle ≤1%). |
| 5 | Tr2 Gate | input | Gate terminal of Tr2 with a built-in gate-source protection diode; gate-source voltage is rated ±20 V maximum. |
| 6 | Tr1 Drain | passive | Drain terminal of Tr1; drain-source voltage is rated 30 V maximum and continuous drain current ±100 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source leakage | IGSS | -1 |  | 1 | µA | VGS=±20V, VDS=0V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 30 |  |  | V | ID= 10µA, VGS=0V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS= 30V, VGS=0V | 2 |
| Gate threshold voltage | VGS (th) | 0.8 |  | 1.5 | V | VDS= 3V, ID= 100µA | 2 |
| Static drain-source on-state resistance | RDS (on) |  | 7 | 13 | Ω | ID= 1mA, VGS= 2.5V | 2 |
| Forward transfer admittance | Yfs | 20 |  |  | mS | ID= 10mA, VDS= 3V | 2 |
| Drain-source voltage | VDSS |  |  | 30 | V | Ta=25°C | 1 |
| Gate-source voltage | VGSS | -20 |  | 20 | V | Ta=25°C | 1 |
| Drain current, continuous | ID | -100 |  | 100 | mA | Continuous, Ta=25°C | 1 |
| Drain current, pulsed | IDP | -400 |  | 400 | mA | Pw≤10µs, Duty cycle≤1% | 1 |
| Total power dissipation | PD |  |  | 150 | mW | With each pin mounted on the recommended lands | 1 |
| Channel temperature | Tch |  |  | 150 | °C |  | 1 |
| Range of storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Channel to ambient, total | Rth(ch-a) |  |  | 833 | °C / W | TOTAL; with each pin mounted on the recommended lands | 1 |
| Channel to ambient, per element | Rth(ch-a) |  |  | 1042 | °C / W | ELEMENT; with each pin mounted on the recommended lands | 1 |

## CAD (KiCad official)

- Symbol: `UM6K1NTN`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `um6k1ntn-etched.step` / `um6k1ntn-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `um6k1ntn.step` / `um6k1ntn.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881234966040576) (4 pp, sha256 `680052426d7b5132`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/um6k1ntn-datasheet.pdf)