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UM6J1NTN

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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UM6J1NTN

ROHM Semicon · MOSFETs · SOT-363

UM6J1NTN from ROHM Semicon, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Tr1 Source of the first P-channel MOSFET, with ESD protection diode between gate and source; VDSS -30V, ID ±200mA.
2 G1 input Tr1 Gate; gate-source voltage limited to ±20V, threshold -1.0 to -2.5V at VDS=-10V, ID=-1mA.
3 D2 passive Tr2 Drain of the second P-channel MOSFET; VDSS -30V, continuous ID ±200mA, pulsed ±400mA.
4 S2 passive Tr2 Source of the second P-channel MOSFET, with ESD protection diode between gate and source; VDSS -30V, ID ±200mA.
5 G2 input Tr2 Gate; gate-source voltage limited to ±20V, threshold -1.0 to -2.5V at VDS=-10V, ID=-1mA.
6 D1 passive Tr1 Drain of the first P-channel MOSFET; VDSS -30V, continuous ID ±200mA, pulsed ±400mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS -30 V 1
Continuous drain current ID -200 200 mA 1
Pulsed drain current IDP -400 400 mA Pw≦10μs, Duty cycle≦1% 1
Gate - Source voltage VGSS -20 20 V 1
Power dissipation, total PD 150 mW Each terminal mounted on a reference land 1
Power dissipation, element PD 120 mW Each terminal mounted on a reference land 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient, total RthJA 833 ℃/W Each terminal mounted on a reference land 2
Thermal resistance, junction - ambient, element RthJA 1042 ℃/W Each terminal mounted on a reference land 2
Drain - Source breakdown voltage V(BR)DSS -30 V VGS = 0V, ID = -1mA 2
Zero gate voltage drain current IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VDS = 0V, VGS = ±20V 2
Gate threshold voltage VGS(th) -1 -2.5 V VDS = -10V, ID = -1mA 2
Static drain - source on-state resistance (VGS = -10V) RDS(on) 0.9 1.4 Ω VGS = -10V, ID = -200mA 2
Static drain - source on-state resistance (VGS = -4.5V) RDS(on) 1.4 2.1 Ω VGS = -4.5V, ID = -150mA 2
Static drain - source on-state resistance (VGS = -4V) RDS(on) 1.6 2.4 Ω VGS = -4V, ID = -150mA 2
Forward transfer admittance /Yfs/ 200 mS VDS = -10V, ID = -150mA 2
Continuous forward current IS 100 mA Ta = 25℃ 3
Pulse forward current ISP 400 mA Pw≦10μs, Duty cycle≦1% 3
Forward voltage VSD -1.2 V VGS = 0V, IS = -100mA 3

CAD (KiCad official)

  • Symbol: UM6J1NTN
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: um6j1ntn-etched.step / um6j1ntn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); um6j1ntn.step / um6j1ntn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 0bad6cd46eafc703, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF