# ULN2003IDRG

**HANSCHIP semiconductor** · Darlington Transistor Arrays · SOP-16

ULN2003IDRG from HANSCHIP semiconductor, in a SOP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1B | input | Base input of Darlington channel 1 with a 2.7K series base resistor, TTL/CMOS compatible at 5V, input voltage -0.3V to 30V. |
| 2 | 2B | input | Base input of Darlington channel 2 with a 2.7K series base resistor, TTL/CMOS compatible at 5V, input voltage -0.3V to 30V. |
| 3 | 3B | input | Base input of Darlington channel 3 with a 2.7K series base resistor, TTL/CMOS compatible at 5V, input voltage -0.3V to 30V. |
| 4 | 4B | input | Base input of Darlington channel 4 with a 2.7K series base resistor, TTL/CMOS compatible at 5V, input voltage -0.3V to 30V. |
| 5 | 5B | input | Base input of Darlington channel 5 with a 2.7K series base resistor, TTL/CMOS compatible at 5V, input voltage -0.3V to 30V. |
| 6 | 6B | input | Base input of Darlington channel 6 with a 2.7K series base resistor, TTL/CMOS compatible at 5V, input voltage -0.3V to 30V. |
| 7 | 7B | input | Base input of Darlington channel 7 with a 2.7K series base resistor, TTL/CMOS compatible at 5V, input voltage -0.3V to 30V. |
| 8 | GND | power_in | Common emitter of all seven Darlington units, connected to ground (pin 8 is not labeled in the datasheet diagram). |
| 9 | COM | passive | Common cathode of the clamp diodes for inductive loads, connected to the load supply. |
| 10 | 7C | output | Open-collector output of channel 7, sinks up to 500mA continuous and withstands 50V off-state (55V maximum). |
| 11 | 6C | output | Open-collector output of channel 6, sinks up to 500mA continuous and withstands 50V off-state (55V maximum). |
| 12 | 5C | output | Open-collector output of channel 5, sinks up to 500mA continuous and withstands 50V off-state (55V maximum). |
| 13 | 4C | output | Open-collector output of channel 4, sinks up to 500mA continuous and withstands 50V off-state (55V maximum). |
| 14 | 3C | output | Open-collector output of channel 3, sinks up to 500mA continuous and withstands 50V off-state (55V maximum). |
| 15 | 2C | output | Open-collector output of channel 2, sinks up to 500mA continuous and withstands 50V off-state (55V maximum). |
| 16 | 1C | output | Open-collector output of channel 1, sinks up to 500mA continuous and withstands 50V off-state (55V maximum). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HANSCHIP semiconductor |
| Package | SOP-16 |
| Category | Transistors/Thyristors |
| Pins | 16 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Output leakage current, TA = 25°C | ICEX |  |  | 20 | μA | TA = 25°C, VCE = 50V | 3 |
| Output leakage current, TA = 85°C | ICEX |  |  | 100 | μA | TA = 85°C, VCE = 50V | 3 |
| Collector-emitter saturation voltage | VCE(Sat) |  | 1.3 | 1.6 | V | IC = 350mA, IB = 500μA | 3 |
| Collector-emitter saturation voltage | VCE(Sat) |  | 1.1 | 1.3 | V | IC = 200mA, IB = 350μA | 3 |
| Collector-emitter saturation voltage | VCE(Sat) |  | 0.9 | 1.1 | V | IC = 100mA, IB = 250μA | 3 |
| ON-state input current | II(ON) |  | 0.93 | 1.35 | mA | VI = 3.85V | 3 |
| OFF-state input current, TA = +25°C | II(OFF) |  | 50 | 100 | μA | IC = 500μA, TA = +25°C | 3 |
| OFF-state input current, TA = +85°C | II(OFF) |  | 25 | 50 | μA | IC = 500μA, TA = +85°C | 3 |
| ON-state input voltage | VI(ON) |  |  | 2.4 | V | VCE = 2.0V, IC = 200mA | 3 |
| ON-state input voltage | VI(ON) |  |  | 2.7 | V | VCE = 2.0V, IC = 250mA | 3 |
| ON-state input voltage | VI(ON) |  |  | 3 | V | VCE = 2.0V, IC = 300mA | 3 |
| Input capacitance | CI |  | 15 | 30 | pF |  | 3 |
| Turn-on delay time | tPLH |  |  | 1 | μs | 0.5 VI to 0.5 VO | 3 |
| Turn-off delay time | tPHL |  |  | 1 | μs | 0.5 VI to 0.5 VO | 3 |
| Clamp diode leakage current, TA = 25°C | IR |  | 5 | 10 | μA | VR = 50V, TA = 25°C | 3 |
| Clamp diode leakage current, TA = 85°C | IR |  | 10 | 50 | μA | VR = 50V, TA = 85°C | 3 |
| Clamp diode forward voltage | VF |  | 1.7 | 2 | V | IF = 350mA | 3 |
| Storage temperature |  | -65 |  | 150 | ℃ |  | 2 |
| Operating temperature range (ULN2003I) |  | -40 |  | 85 | ℃ | ULN2003I | 2 |
| Junction temperature range |  | -40 |  | 150 | ℃ |  | 2 |
| Input voltage |  | -0.3 |  | 30 | V |  | 2 |
| Output voltage |  |  |  | 55 | V |  | 2 |
| Emitter-to-base breakdown voltage |  |  |  | 6 | V |  | 2 |
| Collector continuous output current |  |  |  | 500 | mA |  | 2 |
| Base continuous current |  |  |  | 25 | mA |  | 2 |
| Lead temperature (soldering) |  |  |  | 245 | ℃ | 10 s | 2 |

## CAD (KiCad official)

- Symbol: `ULN2003IDRG`
- Footprint: `Package_SO:SOIC-16_3.9x9.9mm_P1.27mm`
- 3D model: SOP-16 (KiCad packages3D, STEP)
- 3D model files: `uln2003idrg-etched.step` / `uln2003idrg-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `uln2003idrg.step` / `uln2003idrg.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HANSCHIP semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757814509643800576) (9 pp, sha256 `222c43368479bf73`, retrieved 2026-10-21, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/uln2003idrg-datasheet.pdf)