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ULN2002N

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HGSEMI Darlington Transistor Arrays, DIP-14. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ULN2002N

HGSEMI · Darlington Transistor Arrays · DIP-14

ULN2002N from HGSEMI, in a DIP-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected No internal connection; pin is floating (悬空) and is not used.
2 B1 input Channel 1 Darlington base input with internal 4k pull-down; VIN(ON) is 2.8 V min at IOUT 400 mA and VIN(OFF) is 0.7 V max.
3 B2 input Channel 2 Darlington base input with internal 4k pull-down; VIN(ON) is 2.8 V min at IOUT 400 mA and VIN(OFF) is 0.7 V max.
4 B3 input Channel 3 Darlington base input with internal 4k pull-down; VIN(ON) is 2.8 V min at IOUT 400 mA and VIN(OFF) is 0.7 V max.
5 B4 input Channel 4 Darlington base input with internal 4k pull-down; VIN(ON) is 2.8 V min at IOUT 400 mA and VIN(OFF) is 0.7 V max.
6 B5 input Channel 5 Darlington base input with internal 4k pull-down; VIN(ON) is 2.8 V min at IOUT 400 mA and VIN(OFF) is 0.7 V max.
7 E power_in Common emitter of the Darlington channels, connected to ground; total emitter peak current IET is -2 A max.
8 COM passive Common terminal of the internal clamp diodes for inductive-load flyback; clamp diode reverse voltage is 50 V max and forward current IF is 350 mA.
9 C5 output Channel 5 open-collector Darlington output; collector-emitter voltage is 50 V max and collector peak current is 500 mA per channel.
10 C4 output Channel 4 open-collector Darlington output; collector-emitter voltage is 50 V max and collector peak current is 500 mA per channel.
11 C3 output Channel 3 open-collector Darlington output; collector-emitter voltage is 50 V max and collector peak current is 500 mA per channel.
12 C2 output Channel 2 open-collector Darlington output; collector-emitter voltage is 50 V max and collector peak current is 500 mA per channel.
13 C1 output Channel 1 open-collector Darlington output; collector-emitter voltage is 50 V max and collector peak current is 500 mA per channel.
14 NC unconnected No internal connection; pin is floating (悬空) and is not used.

Key specifications

Parameter Value
Manufacturer HGSEMI
Package DIP-14
Category Transistors/Thyristors
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage (pins 13~9) VCE 50 V 4
COM pin voltage (pin 8) VCOM 50 V 4
Input voltage (pins 2~6) VI 30 V 4
Collector peak current ICP 500 mA 4
Output clamp diode forward peak current IOK 500 mA 4
Total emitter peak current IET -2 A 4
Package thermal resistance junction-to-ambient θJA 87 ℃/W DIP14 4
Maximum operating junction temperature TJ 150 ℃ 4
Soldering temperature TLEAD 260 ℃ 10S 4
Storage temperature range Tstg -65 150 ℃ 4
Output voltage VCE(SUS) 0 50 V 5
Output current (continuous) IOUT 90 mA/ch 持续输出,TA= +85℃ 5
Input voltage VIN 0 60 V 5
Input voltage (output on) VIN(ON) 2.8 12 V Iout=400mA 5
Input voltage (output off) VIN(OFF) 0 0.7 V 5
Clamp diode reverse voltage VR 50 V 5
Clamp diode forward peak current IF 350 mA 5
Operating ambient temperature range TA -40 85 ℃ 5
Operating junction temperature TJ -40 125 ℃ 5
Power dissipation (DIP14) PD 1.15 W TA=+25℃ 5
Power dissipation (DIP14) PD 0.46 W TA=+85℃ 5
On-state input voltage VI(ON) 1.73 2.1 V VCE=1.5V, input not current-limited, TA=0℃, IC=30mA 5
On-state input voltage VI(ON) 1.76 2.15 V VCE=1.5V, input not current-limited, TA=0℃, IC=60mA 5
On-state input voltage VI(ON) 1.8 2.2 V VCE=1.5V, input not current-limited, TA=0℃, IC=120mA 5
On-state input voltage VI(ON) 1.88 2.35 V VCE=1.5V, input not current-limited, TA=0℃, IC=240mA 5
On-state input voltage VI(ON) 2 2.5 V VCE=1.5V, input not current-limited, TA=0℃, IC=350mA 5
On-state input voltage VI(ON) 1.63 2 V VCE=1.5V, input not current-limited, TA=25℃, IC=30mA 5
On-state input voltage VI(ON) 1.66 2 V VCE=1.5V, input not current-limited, TA=25℃, IC=60mA 5
On-state input voltage VI(ON) 1.69 2.1 V VCE=1.5V, input not current-limited, TA=25℃, IC=120mA 5
On-state input voltage VI(ON) 1.76 2.2 V VCE=1.5V, input not current-limited, TA=25℃, IC=240mA 5
On-state input voltage VI(ON) 1.87 2.3 V VCE=1.5V, input not current-limited, TA=25℃, IC=350mA 5
On-state input voltage VI(ON) 2.21 2.65 V II=800uA, TA=0℃, IC=30mA 5
On-state input voltage VI(ON) 2.25 2.7 V II=800uA, TA=0℃, IC=60mA 6
On-state input voltage VI(ON) 2.3 2.76 V II=800uA, TA=0℃, IC=120mA 6
On-state input voltage VI(ON) 2.42 2.9 V II=800uA, TA=0℃, IC=240mA 6
On-state input voltage VI(ON) 2.55 3.06 V II=800uA, TA=0℃, IC=350mA 6
On-state input voltage VI(ON) 2.54 3.05 V II=1mA, VCE<1.5V, TA=0℃, IC=30mA 6
On-state input voltage VI(ON) 2.58 3.1 V II=1mA, VCE<1.5V, TA=0℃, IC=60mA 6
On-state input voltage VI(ON) 2.64 3.17 V II=1mA, VCE<1.5V, TA=0℃, IC=120mA 6
On-state input voltage VI(ON) 2.77 3.32 V II=1mA, VCE<1.5V, TA=0℃, IC=240mA 6
On-state input voltage VI(ON) 2.91 3.49 V II=1mA, VCE<1.5V, TA=0℃, IC=350mA 6
Collector-emitter saturation voltage VCE(SAT) 0.81 V VI=2.4V, II>800uA, TA=0℃, IC=30mA 6
Collector-emitter saturation voltage VCE(SAT) 0.86 V VI=2.4V, II>800uA, TA=0℃, IC=60mA 6
Collector-emitter saturation voltage VCE(SAT) 0.94 V VI=2.4V, II>800uA, TA=0℃, IC=120mA 6
Collector-emitter saturation voltage VCE(SAT) 1.12 V VI=2.4V, II>800uA, TA=0℃, IC=240mA 6
Collector-emitter saturation voltage VCE(SAT) 1.3 V VI=2.4V, II>800uA, TA=0℃, IC=350mA 6
Collector-emitter saturation voltage VCE(SAT) 0.76 V VI=2.4V, II>800uA, TA=25℃, IC=30mA 6
Collector-emitter saturation voltage VCE(SAT) 0.88 V VI=2.4V, II>800uA, TA=25℃, IC=120mA 6
Collector-emitter saturation voltage VCE(SAT) 1.03 V VI=2.4V, II>800uA, TA=25℃, IC=240mA 6
Collector-emitter saturation voltage VCE(SAT) 1.2 V VI=2.4V, II>800uA, TA=25℃, IC=350mA 6
Clamp diode forward voltage VF 1.4 1.6 V IF=350mA, TA=0℃ 7
Collector cut-off leakage current ICEX 50 µA VCE=50V, II=0 7
Collector breakdown voltage ICE 50 V VCE=50V, II=0 7
Clamp diode reverse leakage current IR 50 µA VR=50V 7
Propagation delay low-to-high tPLH 0.15 1 µs VL=12V, RL=45Ω 7
Propagation delay high-to-low tPLH 0.15 1 µs VL=12V, RL=45Ω 7

CAD (KiCad official)

  • Symbol: ULN2002N
  • Footprint: Package_DIP:DIP-14_W7.62mm
  • 3D model: DIP-14 (KiCad packages3D, STEP)
  • 3D model files: uln2002n-etched.step / uln2002n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); uln2002n.step / uln2002n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HGSEMI datasheet (13 pp, sha256 dbcc598238a7a94f, retrieved 2026-10-14, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF