component
UJ3C065080K3S
Public Made by Adomby adom
Qorvo MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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UJ3C065080K3S
Qorvo · MOSFETs · TO-247-3
UJ3C065080K3S from Qorvo, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the cascode SiC FET, with a maximum gate-source DC rating of -25 V to +25 V and switching tests run at VGS = -5 V / +15 V. |
| 2 | D | passive | Drain terminal of the SiC FET, rated for a drain-source voltage of 650 V and a maximum drain current of 31 A in the maximum ratings table. |
| 3 | S | passive | Source terminal of the cascode device, which is the reference for the gate drive; the datasheet gives no separate electrical limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Qorvo |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
UJ3C065080K3S - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
uj3c065080k3s-etched.step/uj3c065080k3s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);uj3c065080k3s.step/uj3c065080k3s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Qorvo datasheet (10 pp, sha256
02858732a147ede6, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).