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UFZ24NL-F
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UTC Unisonic Tech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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UFZ24NL-F
UTC Unisonic Tech · MOSFETs · TO-220
UFZ24NL-F from UTC Unisonic Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement-mode MOSFET; the datasheet rates gate-source voltage VGSS at ±20 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 55 V and continuous drain current ID at 17 A (TC=25°C). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates maximum body-diode continuous current IS at 17 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 55 | V | 3 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 3 | ||
| Drain Current Continuous | ID | 17 | A | TC=25°C | 3 | ||
| Drain Current Continuous | ID | 10 | A | TC=100°C | 3 | ||
| Pulsed Drain Current | IDM | 40 | A | Pulsed (Note 1) | 3 | ||
| Avalanche Current | IAR | 10 | A | Note 1 | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 135 | mJ | Single pulsed (Note 2) | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 16 | V/ns | Note 3 | 3 | ||
| Power Dissipation | PD | 45 | W | TC=25°C, TO-220 | 3 | ||
| Junction Temperature | TJ | -55 | 175 | °C | 3 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 3 | ||
| Junction to Ambient, TO-220 | θJA | 62.5 | °C/W | TO-220 | 3 | ||
| Junction to Case, TO-220 | θJC | 2.77 | °C/W | TO-220 | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 55 | V | ID=250µA, VGS=0V | 4 | ||
| Drain-Source Leakage Current | IDSS | 25 | µA | VDS=55V, VGS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=+20V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.07 | Ω | VGS=10V, ID=10A | 4 | ||
| Maximum Body-Diode Continuous Current | IS | 17 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 40 | A | 4 | |||
| Reverse Recovery Time | trr | 63 | 83 | ns | IS=10A, VGS=0V, dIF/dt=100A/µs | 4 | |
| Reverse Recovery Charge | Qrr | 93 | 180 | nC | IS=10A, VGS=0V, dIF/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
UFZ24NL-F - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ufz24nl-f-etched.step/ufz24nl-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ufz24nl-f.step/ufz24nl-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256
f3099bdae52870b7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# UFZ24NL-F
**UTC Unisonic Tech** · MOSFETs · TO-220
UFZ24NL-F from UTC Unisonic Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement-mode MOSFET; the datasheet rates gate-source voltage VGSS at ±20 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 55 V and continuous drain current ID at 17 A (TC=25°C). |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates maximum body-diode continuous current IS at 17 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 55 | V | | 3 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 3 |
| Drain Current Continuous | ID | | | 17 | A | TC=25°C | 3 |
| Drain Current Continuous | ID | | | 10 | A | TC=100°C | 3 |
| Pulsed Drain Current | IDM | | | 40 | A | Pulsed (Note 1) | 3 |
| Avalanche Current | IAR | | | 10 | A | Note 1 | 3 |
| Avalanche Energy Single Pulsed | EAS | | | 135 | mJ | Single pulsed (Note 2) | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 16 | V/ns | Note 3 | 3 |
| Power Dissipation | PD | | | 45 | W | TC=25°C, TO-220 | 3 |
| Junction Temperature | TJ | -55 | | 175 | °C | | 3 |
| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 3 |
| Junction to Ambient, TO-220 | θJA | | | 62.5 | °C/W | TO-220 | 3 |
| Junction to Case, TO-220 | θJC | | | 2.77 | °C/W | TO-220 | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 55 | | | V | ID=250µA, VGS=0V | 4 |
| Drain-Source Leakage Current | IDSS | | | 25 | µA | VDS=55V, VGS=0V | 4 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS=-20V, VDS=0V | 4 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250µA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | | 0.07 | Ω | VGS=10V, ID=10A | 4 |
| Maximum Body-Diode Continuous Current | IS | | | 17 | A | | 4 |
| Maximum Body-Diode Pulsed Current | ISM | | | 40 | A | | 4 |
| Reverse Recovery Time | trr | | 63 | 83 | ns | IS=10A, VGS=0V, dIF/dt=100A/µs | 4 |
| Reverse Recovery Charge | Qrr | | 93 | 180 | nC | IS=10A, VGS=0V, dIF/dt=100A/µs | 4 |
## CAD (KiCad official)
- Symbol: `UFZ24NL-F`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `ufz24nl-f-etched.step` / `ufz24nl-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ufz24nl-f.step` / `ufz24nl-f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078201212358656) (9 pp, sha256 `f3099bdae52870b7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ufz24nl-f-datasheet.pdf)