UF630L-TA3-T

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  "title": "UF630L-TA3-T",
  "brief": "UTC Unisonic Tech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "UF630L-TA3-T",
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    "package": "TO-220",
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    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGSS)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal; the part is rated for 200 V drain-source voltage (VDSS) and 9 A continuous drain current (ID)."
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      {
        "number": "3",
        "name": "S",
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        "description": "Source terminal, the reference for the 200 V VDSS and ±20 V VGSS ratings."
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  "metadata": {
    "specs": {
      "Manufacturer": "UTC Unisonic Tech",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
      "version": 1,
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          "name": "Drain-Source Voltage",
          "symbol": "VDSS",
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          "unit": "V",
          "min": null,
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          "max": 200,
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          "name": "Drain-Gate Voltage",
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        {
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          "typ": null,
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        {
          "name": "Continuous Drain Current",
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        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
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        {
          "name": "Single Pulse Avalanche Energy",
          "symbol": "EAS",
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          "unit": "mJ",
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          "conditions": "L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C",
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        {
          "name": "Power Dissipation (TO-220/TO-262)",
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          "name": "Junction Temperature",
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        {
          "name": "Storage Temperature",
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          "unit": "°C",
          "min": -55,
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        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 200,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID = 250μA",
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        },
        {
          "name": "On-State Drain Current",
          "symbol": "ID(ON)",
          "kind": "electrical",
          "unit": "A",
          "min": 9,
          "typ": null,
          "max": null,
          "conditions": "VDS > ID(ON) x RDS(ON)MAX, VGS = 10V",
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        },
        {
          "name": "Drain-Source Leakage Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
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          "conditions": "VDS = Rated BVDSS, VGS = 0V",
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        {
          "name": "Forward Gate-Source Leakage Current",
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          "name": "Reverse Gate-Source Leakage Current",
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          "max": -100,
          "conditions": "VGS = -20V, VDS = 0V",
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        {
          "name": "Gate Threshold Voltage",
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          "min": 2,
          "typ": null,
          "max": 4,
          "conditions": "VGS = VDS, ID = 250μA",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Static Drain-Source On-State Resistance",
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          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 0.25,
          "max": 0.4,
          "conditions": "VGS = 10V, ID = 5A",
          "source_page": 4,
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        },
        {
          "name": "Total Gate Charge",
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          "typ": 19,
          "max": 30,
          "conditions": "",
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        {
          "name": "Drain-Source Diode Forward Voltage",
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        {
          "name": "Maximum Continuous Drain-Source Diode Forward Current",
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        {
          "name": "Maximum Pulsed Drain-Source Diode Forward Current",
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          "name": "Junction to Ambient (TO-220)",
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          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 62.5,
          "max": null,
          "conditions": "TO-220/TO-262 (grouped with TO-220F1/TO-220F/TO-220F2 in printed layout)",
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        {
          "name": "Junction to Case (TO-220)",
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          "kind": "thermal",
          "unit": "°C/W",
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          "typ": 1.71,
          "max": null,
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